All-optical probing of the nonlinear acoustics of a crack

2011 ◽  
Vol 36 (17) ◽  
pp. 3449 ◽  
Author(s):  
Sylvain Mezil ◽  
Nikolay Chigarev ◽  
Vincent Tournat ◽  
Vitalyi Gusev
Keyword(s):  
Nonlinear Acoustics ◽  
All Optical ◽  
Optical Probing

All-optical probing of laser-induced modulation of crack parameters by surface Rayleigh and surface skimming longitudinal bulk acoustic pulses

2012 ◽  
Vol 131 (4) ◽  
pp. 3477-3477 ◽  
Author(s):  
Chen-Yin NI ◽  
Nikolay Chigarev ◽  
Vincent Tournat ◽  
Nicolas Delorme ◽  
Zhong-Hua Shen ◽  
...  
Keyword(s):  
All Optical ◽  
Optical Probing

All-optical probing of GHz acoustic waves in multiferroic MEMS

2018 ◽  
Author(s):  
Derek Bas ◽  
Nian X. Sun ◽  
Timothy J. Bunning ◽  
Michael E. McConney ◽  
Hwaider Lin ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
All Optical ◽  
Optical Probing

Correlation analysis of radiation damage

1978 ◽  
Vol 36 (1) ◽  
pp. 214-215
Author(s):  
R. Hegerl ◽  
A. Feltynowski ◽  
B. Grill
Keyword(s):  
Electron Microscopy ◽  
Independent Random Variables ◽  
Optical Parameters ◽  
Bright Field Image ◽  
Bright Field ◽  
Expectation Value ◽  
All Optical ◽  
Image Element ◽  
Stochastic Series ◽  
The Common

Till now correlation functions have been used in electron microscopy for two purposes: a) to find the common origin of two micrographs representing the same object, b) to check the optical parameters e. g. the focus. There is a third possibility of application, if all optical parameters are constant during a series of exposures. In this case all differences between the micrographs can only be caused by different noise distributions and by modifications of the object induced by radiation.Because of the electron noise, a discrete bright field image can be considered as a stochastic series Pm,where i denotes the number of the image and m (m = 1,.., M) the image element. Assuming a stable object, the expectation value of Pm would be Ηm for all images. The electron noise can be introduced by addition of stationary, mutual independent random variables nm with zero expectation and the variance. It is possible to treat the modifications of the object as a noise, too.

ALL-OPTICAL DIGITAL CIRCUITS

1988 ◽  
Vol 49 (C2) ◽  
pp. C2-459-C2-462 ◽  
Author(s):  
F. A.P. TOOLEY ◽  
B. S. WHERRETT ◽  
N. C. CRAFT ◽  
M. R. TAGHIZADEH ◽  
J. F. SNOWDON ◽  
...  
Keyword(s):  
Digital Circuits ◽  
All Optical

NONLINEAR ACOUSTICS APPLICATIONS FOR NEAR WELLBORE FORMATION EVALUATION

2020 ◽  
Author(s):  
Christopher Skelt ◽  
◽  
James TenCate ◽  
Robert Guyer ◽  
Paul Johnson ◽  
...  
Keyword(s):  
Nonlinear Acoustics ◽  
Formation Evaluation

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

Case Study of Electro-Optical Probing Signal with High Signal-Noise Ratio

2019 ◽  
Author(s):  
Ryan Xiao ◽  
William Wang ◽  
Ang Li ◽  
Shengqiu Xu ◽  
Binghai Liu
Keyword(s):  
Failure Mode ◽  
High Signal ◽  
Signal Noise ◽  
Electrical Failure ◽  
Current Path ◽  
Probing Signal ◽  
Optical Probing ◽  
Noise Ratio ◽  
Case Collection

Abstract With the development of semiconductor technology and the increment quantity of metal layers in past few years, backside EFA (Electrical Failure Analysis) technology has become the dominant method. In this paper, abnormally high Signal Noise Ratio (SNR) signal captured by Electro-Optical Probing (EOP)/Laser Voltage Probing (LVP) from backside is shown and the cause of these phenomena are studied. Based on the real case collection, two kinds of failure mode are summarized, and simulated experiments are performed. The results indicate that when a current path from power to ground is formed, the high SNR signal can be captured at the transistor which was on this current path. It is helpful of this consequence for FA to identify the failure mode by high SNR signal.

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