Measurement of the dielectric constant of thin films by terahertz time-domain spectroscopic ellipsometry

2011 ◽  
Vol 36 (2) ◽  
pp. 265 ◽  
Author(s):  
Naoki Matsumoto ◽  
Tadasu Hosokura ◽  
Takeshi Nagashima ◽  
Masanori Hangyo
2003 ◽  
Vol 784 ◽  
Author(s):  
K. Kotani ◽  
M. Misra ◽  
I. Kawayama ◽  
M. Tonouchi

ABSTRACTWe have measured the dielectric and optical properties of pulsed laser deposited SrBi2Ta 2O9 and Sr0.8Bi2.2Ta2O9 thin films on MgO substrate in THz frequency region by THz time-domain spectroscopy. The imaginary parts of the dielectric constant of both the samples show broad peaks in the frequency range 0.5–1.0 THz, which may be due to the soft mode in SBT in this frequency spectrum. The difference in the real part of the dielectric constant of Sr0.8Bi2.2Ta2O9 thin films is small for MHz and THz frequencies. On the other hand, the value of real part of dielectric constant of SrBi2Ta2O9 thin films in THz frequency range is much smaller than that in MHz frequency region, indicating that SrBi2Ta2O9 is not simply displacive ferroelectric material.


2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


2003 ◽  
Vol 119 (12) ◽  
pp. 6335-6340 ◽  
Author(s):  
M. I. Alonso ◽  
M. Garriga ◽  
J. O. Ossó ◽  
F. Schreiber ◽  
E. Barrena ◽  
...  

2021 ◽  
Vol 129 (24) ◽  
pp. 243102
Author(s):  
Kohei Oiwake ◽  
Yukinori Nishigaki ◽  
Shohei Fujimoto ◽  
Sara Maeda ◽  
Hiroyuki Fujiwara

2003 ◽  
Vol 38 (9) ◽  
pp. 773-778 ◽  
Author(s):  
B. Karunagaran ◽  
R. T. Rajendra Kumar ◽  
C. Viswanathan ◽  
D. Mangalaraj ◽  
Sa. K. Narayandass ◽  
...  

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