scholarly journals Ultrasound-modulated optical imaging using a high-power pulsed laser and a double-pass confocal Fabry–Perot interferometer

2009 ◽  
Vol 34 (21) ◽  
pp. 3445 ◽  
Author(s):  
Guy Rousseau ◽  
Alain Blouin ◽  
Jean-Pierre Monchalin
Keyword(s):  
Optical Imaging ◽  
High Power ◽  
Pulsed Laser ◽  
Double Pass ◽  
Fabry Perot

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

High power and very low noise operation at 1.3 and 1.5 μm with quantum dot and quantum dash Fabry-Perot lasers for microwave links

2006 ◽  
Author(s):  
Patrick Resneau ◽  
Michel Calligaro ◽  
Michel Krakowski ◽  
Huiyun Liu ◽  
Mark Hopkinson ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Low Noise ◽  
Fabry Perot ◽  
Quantum Dash

Investigation on a Novel Fabry-Perot Filter for High Power Tunable Fiber Laser

2010 ◽  
Vol 37 (9) ◽  
pp. 2351-2354
Author(s):  
苏立钦 Su Liqin ◽  
沈永行 Shen Yonghang
Keyword(s):  
Fiber Laser ◽  
High Power ◽  
Fabry Perot ◽  
Tunable Fiber Laser

Investigation of nonlinear and thermal effects of high power pulsed laser isolators

2013 ◽  
Vol 25 (2) ◽  
pp. 281-286
Author(s):  
赵钦 Zhao Qin ◽  
张海涛 Zhang Haitao ◽  
郑超 Zheng Chao ◽  
肖杰 Xiao Jie ◽  
陈倚竹 Chen Yizhu ◽  
...  
Keyword(s):  
High Power ◽  
Thermal Effects ◽  
Pulsed Laser

Nd:YAG Pulsed Laser Double-Pass Time-Sharing Multiplexing System

2013 ◽  
Vol 50 (1) ◽  
pp. 011402
Author(s):  
张健 Zhang Jian ◽  
张庆茂 Zhang Qingmao ◽  
陈国 Chen Guo ◽  
李泽曦 Li Zexi ◽  
吴锐欢 Wu Ruihuan ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Time Sharing ◽  
Double Pass
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