Mode purities of Laguerre–Gaussian beams generated via complex-amplitude modulation using phase-only spatial light modulators

2008 ◽  
Vol 34 (1) ◽  
pp. 34 ◽  
Author(s):  
Taro Ando ◽  
Yoshiyuki Ohtake ◽  
Naoya Matsumoto ◽  
Takashi Inoue ◽  
Norihiro Fukuchi
2015 ◽  
Vol 21 (1) ◽  
pp. 86-92
Author(s):  
郭帅凤 GUO Shuai-feng ◽  
刘奎 LIU Kui ◽  
孙恒信 SUN Heng-xin ◽  
张俊香 ZHANG Jun-xiang ◽  
郜江瑞 GAO Jiang-rui

2020 ◽  
Vol 10 (3) ◽  
pp. 1132 ◽  
Author(s):  
Tomoyoshi Shimobaba ◽  
Michal Makowski ◽  
Takayuki Takahashi ◽  
Yota Yamamoto ◽  
Ikuo Hoshi ◽  
...  

A complex amplitude hologram can reconstruct perfect light waves. However, as there are no spatial light modulators that are able to display complex amplitudes, we need to use amplitude, binary, or phase-only holograms. The images reconstructed from such holograms will deteriorate; to address this problem, iterative hologram optimization algorithms have been proposed. One of the iterative algorithms utilizes a blank area to help converge the optimization; however, the calculation time and memory usage involved increases. In this study, we propose to reduce the computational complexity and memory usage of the iterative optimization using scaled diffraction, which can calculate light propagation with different sampling pitches on a hologram plane and object plane. Scaled diffraction can introduce a virtual blank area without using physical memory. We further propose a combination of scaled diffraction-based optimization and conventional methods. The combination algorithm improves the quality of a reconstructed complex amplitude while accelerating optimization.


2008 ◽  
Vol 25 (7) ◽  
pp. 1642 ◽  
Author(s):  
Naoya Matsumoto ◽  
Taro Ando ◽  
Takashi Inoue ◽  
Yoshiyuki Ohtake ◽  
Norihiro Fukuchi ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


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