Extraordinary optical transmission through hole arrays in optically thin metal films

2008 ◽  
Vol 34 (1) ◽  
pp. 4 ◽  
Author(s):  
Sergio G. Rodrigo ◽  
L. Martín-Moreno ◽  
A. Yu. Nikitin ◽  
A. V. Kats ◽  
I. S. Spevak ◽  
...  
Keyword(s):  
Optical Transmission ◽  
Metal Films ◽  
Extraordinary Optical Transmission ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Hole Arrays ◽  
Through Hole

Localised modes of sub-wavelength hole arrays in thin metal films

2008 ◽  
Author(s):  
J. Parsons ◽  
E. Hendry ◽  
B. Auguié ◽  
W. L. Barnes ◽  
J. R. Sambles
Keyword(s):  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Hole Arrays ◽  
Sub Wavelength

Optical Transmission through Hexagonal Arrays of Subwavelength Holes in Thin Metal Films

Nano Letters ◽  
2007 ◽  
Vol 7 (9) ◽  
pp. 2926-2930 ◽  
Author(s):  
G. Ctistis ◽  
P. Patoka ◽  
X. Wang ◽  
K. Kempa ◽  
M. Giersig
Keyword(s):  
Optical Transmission ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Hexagonal Arrays

scholarly journals Investigation of Optical Transmission in Thin Metal Films

2012 ◽  
Vol 32 ◽  
pp. 1-13 ◽  
Author(s):  
A. Axelevitch ◽  
B. Gorenstein ◽  
G. Golan
Keyword(s):  
Optical Transmission ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Resonant optical transmission through hole-arrays in metal films: physics and applications

2009 ◽  
Vol 4 (2) ◽  
pp. 311-335 ◽  
Author(s):  
R. Gordon ◽  
A.G. Brolo ◽  
D. Sinton ◽  
K.L. Kavanagh
Keyword(s):  
Optical Transmission ◽  
Metal Films ◽  
Hole Arrays ◽  
Through Hole

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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