Highly efficient diode-pumped actively Q-switched Nd:YAG-SrWO_4 intracavity Raman laser

2008 ◽  
Vol 33 (7) ◽  
pp. 705 ◽  
Author(s):  
Xiaohan Chen ◽  
Xingyu Zhang ◽  
Qingpu Wang ◽  
Ping Li ◽  
Shutao Li ◽  
...  
Keyword(s):  
Raman Laser ◽  
Highly Efficient ◽  
Diode Pumped

Highly efficient 1181nm output from a transversely diode-pumped Nd3+:KGd(WO4)2 self-stimulating Raman laser

2006 ◽  
Vol 260 (2) ◽  
pp. 675-679 ◽  
Author(s):  
Akihide Hamano ◽  
Simon Pleasants ◽  
Masahito Okida ◽  
Masahide Itoh ◽  
Toyohiko Yatagai ◽  
...  
Keyword(s):  
Raman Laser ◽  
Highly Efficient ◽  
Diode Pumped

Broadly Tunable Femtosecond Sources in the Mid-Infrared and Two-Wavelength Ultrafast Spectroscopy of Holes in GaAs

1998 ◽  
Vol 07 (01) ◽  
pp. 61-71
Author(s):  
C. L. Tang ◽  
K. C. Burr ◽  
F. Sh. Ganikhanov
Keyword(s):  
Conduction Band ◽  
Periodically Poled ◽  
Parametric Oscillators ◽  
Periodically Poled Lithium Niobate ◽  
Highly Efficient ◽  
Optical Parametric ◽  
Hole Band ◽  
Ion Laser ◽  
Diode Pumped ◽  
Band Transition

The recent development of periodically poled lithium niobate (PPLN) has led to a variety of highly efficient and compact all-solid-state nonlinear optical devices. Of particular interest are the optical parametric oscillators. We have most recently demonstrated for the first time a highly efficient broadly tunable femtosecond optical parametric oscillator (fs OPO) using PPLN. The threshold for oscillation of the PPLN fs OPO is remarkably low, on the order of 50 mW. As a result, it is now possible to use a diode-pumped and frequency-doubled Nd:YVO 4 laser, rather than an Ar-ion laser, as the pump source for the mode-locked Ti:sapphire laser for pumping the fs OPO. Such an OPO can operate from approximately 1 μm to 5.4 μm. Femtosecond sources have been used in a variety of experiments to study the dynamics of hot carriers in semiconductors. Because of the limited available wavelength range of earlier femtosecond sources, most such studies have been limited to electron dynamics in the conduction band of III–V compounds such as GaAs. With the extended tuning range of the recently developed fs OPO's, it is now possible to study a much wider variety of materials and transitions. We have recently obtained preliminary results on the ultrafast dynamics of holes in GaAs using two-wavelength tunable femtosecond spectroscopy, by pumping the valence-to-conduction band transition at approximately 800 nm and simultaneously probing the transitions between the split-off band and the perturbed heavy-hole band at approximately 3 μm. These recent results are summarized and discussed briefly.

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173nm

2010 ◽  
Vol 42 (5) ◽  
pp. 716-719 ◽  
Author(s):  
Zhichao Wang ◽  
Chenlin Du ◽  
Shuangchen Ruan ◽  
Li Zhang
Keyword(s):  
Laser Diode ◽  
Raman Laser ◽  
Diode Pumped

Highly efficient phase locking and extracavity coherent combination of two diode-pumped Nd:YAG laser beams

1996 ◽  
Vol 21 (24) ◽  
pp. 1996 ◽  
Author(s):  
S. Ménard ◽  
M. Vampouille ◽  
B. Colombeau ◽  
C. Froehly
Keyword(s):  
Nd:Yag Laser ◽  
Phase Locking ◽  
Laser Beams ◽  
Highly Efficient ◽  
Diode Pumped ◽  
Diode Pumped Nd:Yag Laser

Efficient diode-pumped passively Q-switched Raman laser on barium tungstate crystal

2002 ◽  
Vol 209 (4-6) ◽  
pp. 403-409 ◽  
Author(s):  
Pavel Černý ◽  
Waldemar Żendzian ◽  
Jan Jabczyński ◽  
Helena Jelı́nková ◽  
Jan Šulc ◽  
...  
Keyword(s):  
Raman Laser ◽  
Diode Pumped ◽  
Barium Tungstate ◽  
Tungstate Crystal

Highly efficient 13-µm second-Stokes PbWO_4 Raman laser

2003 ◽  
Vol 28 (6) ◽  
pp. 426 ◽  
Author(s):  
Gad M. A. Gad ◽  
Hans J. Eichler ◽  
Alexander A. Kaminskii
Keyword(s):  
Raman Laser ◽  
Highly Efficient

Diode-pumped actively Q-switched c-cut Nd:YVO4self-Raman laser

2009 ◽  
Vol 6 (1) ◽  
pp. 26-29 ◽  
Author(s):  
X.H. Chen ◽  
X.Y. Zhang ◽  
Q.P. Wang ◽  
P. Li ◽  
Z.H. Cong
Keyword(s):  
Raman Laser ◽  
Diode Pumped

Diode pumped Nd:YVO4/LBO/Ba(NO3)2 Raman laser at 563 nm

2020 ◽  
Vol 17 (6) ◽  
pp. 065801
Author(s):  
G V Shilova ◽  
P G Zverev ◽  
A A Sirotkin
Keyword(s):  
Raman Laser ◽  
Diode Pumped

Highly efficient 12  W diode-pumped actively Q-switched Yb:KGd(WO_4)_2 laser

2014 ◽  
Vol 39 (10) ◽  
pp. 3038 ◽  
Author(s):  
V. E. Kisel ◽  
A. S. Rudenkov ◽  
N. V. Kuleshov ◽  
A. A. Pavlyuk
Keyword(s):  
Highly Efficient ◽  
Diode Pumped
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