Excitation-density-dependent generation of broadband terahertz radiation in an asymmetrically excited photoconductive antenna

2007 ◽  
Vol 32 (16) ◽  
pp. 2297 ◽  
Author(s):  
Prashanth C. Upadhya ◽  
Wenhui Fan ◽  
Andrew Burnett ◽  
John Cunningham ◽  
A. Giles Davies ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Excitation Density ◽  
Photoconductive Antenna ◽  
Density Dependent ◽  
Broadband Terahertz

Terahertz-radiation-enhanced broadband terahertz generation from large aperture photoconductive antenna

2012 ◽  
Vol 109 (1) ◽  
pp. 133-136 ◽  
Author(s):  
Yaohui Gao ◽  
Chia-En Yang ◽  
Yunching Chang ◽  
Jimmy Yao ◽  
Stuart Yin ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Terahertz Generation ◽  
Photoconductive Antenna ◽  
Large Aperture ◽  
Broadband Terahertz

scholarly journals Broadband terahertz radiation from two-color mid- and far-infrared laser filaments in air

2018 ◽  
Vol 97 (6) ◽  
Author(s):  
Alisée Nguyen ◽  
Pedro González de Alaiza Martínez ◽  
Illia Thiele ◽  
Stefan Skupin ◽  
Luc Bergé
Keyword(s):  
Terahertz Radiation ◽  
Far Infrared ◽  
Infrared Laser ◽  
Far Infrared Laser ◽  
Broadband Terahertz

Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3866-3872
Author(s):  
Ch. Ramesh ◽  
J. Pandey ◽  
P. Tyagi ◽  
A. Soni ◽  
M. Senthil Kumar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Density ◽  
Density Dependent ◽  
Band Emission ◽  
Luminescence Peak ◽  
Photoluminescence Studies ◽  
Gan Film

The optical properties of laser-assisted molecular beam epitaxy grown homo-epitaxialGaN nanowall networks (NWNs) were investigated using power dependent photoluminescence (PL) spectroscopy and compared with homo-epitaxial GaN thin film. The pore size and tip width of GaN NWN sample is ˜120–180 nm and 10–15 nm, respectively. The ultraviolet-visible spectroscopy study shows that the GaN NWNs have low optical light reflection and minimum Fabry-Perot cavity effect than GaN film. The room temperature PL spectroscopy reveals that the GaN NWNs possesses enhanced band gap of 3.51 eV with blue shift of 90 meV than the GaN film (3.42 eV). The excitation density dependent PL spectroscopy measurements reveal that the GaN NWNs nanowall and near band emission (NBE) peak position and its linewidth invariant. The intensity of NBE peak for GaN film and nanowalls varies linearly whereas NBE to defect related yellow luminescence peak intensity ratio shows a non-linear variation on the excitation density. The excitation density in PL measurements plays a key role when the sample quality compared on the basis of PL data.

Time-resolved excitation density dependent fluorescence of R-phycoerythrin single crystal

1994 ◽  
Vol 222 (3) ◽  
pp. 204-208 ◽  
Author(s):  
H.Z. Wang ◽  
X.G. Zheng ◽  
F.L. Zhao ◽  
Z.L. Gao ◽  
Z.X. Yu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Excitation Density ◽  
Time Resolved ◽  
Density Dependent

Liquid jet-based broadband terahertz radiation source

2021 ◽  
Vol 60 (08) ◽  
Author(s):  
Azat O. Ismagilov ◽  
Evgenia A. Ponomareva ◽  
Maria O. Zhukova ◽  
Sergey E. Putilin ◽  
Boris A. Nasedkin ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Radiation Source ◽  
Liquid Jet ◽  
Broadband Terahertz

Broadband terahertz radiation produced in an AgGaSe2 crystal

2020 ◽  
Author(s):  
Brett N. Carnio ◽  
Kevin T. Zawilski ◽  
Peter G. Schunemann ◽  
Abdul Y. Elezzabi
Keyword(s):  
Terahertz Radiation ◽  
Broadband Terahertz
Sign in / Sign up

Export Citation Format

Share Document