High-power single-mode emission from a broad-area semiconductor laser with a pseudoexternal cavity and a Fabry–Perot etalon

1997 ◽  
Vol 22 (16) ◽  
pp. 1250 ◽  
Author(s):  
W. Nagengast ◽  
K. Rith
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Broad Area ◽  
Fabry Perot

Design and fabrication of 1.55 μm broad area slotted single-mode Fabry–Perot lasers

2016 ◽  
Vol 37 (3) ◽  
pp. 034007 ◽  
Author(s):  
Mengke Li ◽  
Lijun Yuan ◽  
Hongyan Yu ◽  
Qiang Kan ◽  
Shiyan Li ◽  
...  
Keyword(s):  
Single Mode ◽  
Broad Area ◽  
Fabry Perot

High power semiconductor laser array with single mode emission

2021 ◽  
Author(s):  
Peng Jia ◽  
Zhi-Jun Zhang ◽  
Yong-Yi Chen ◽  
Zai-Jin Li ◽  
Li Qin ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Laser Array ◽  
Power Semiconductor

Low jitter single‐mode pulse generation by a self‐seeded, gain‐switched Fabry–Pérot semiconductor laser

1994 ◽  
Vol 65 (24) ◽  
pp. 3045-3047 ◽  
Author(s):  
M. Schell ◽  
W. Utz ◽  
D. Huhse ◽  
J. Kässner ◽  
D. Bimberg
Keyword(s):  
Semiconductor Laser ◽  
Single Mode ◽  
Pulse Generation ◽  
Fabry Perot ◽  
Low Jitter

scholarly journals PHOTOREFRACTIVE TECHNIQUES FOR DIODE LASER BEAM COMBINATION

1992 ◽  
Vol 01 (02) ◽  
pp. 431-445 ◽  
Author(s):  
STUART MacCORMACK ◽  
ROBERT W. EASON
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Signal Beam ◽  
Laser Array ◽  
Power Semiconductor ◽  
Laser Amplifiers ◽  
Single Mode Laser ◽  
Beam Combination ◽  
Diode Laser Beam

Techniques for high-power laser array beam combination processes involving photo-refractive materials are reviewed. Details of an all semiconductor laser scheme for the amplification and subsequent photorefractive beam clean-up of a diffraction limited single-mode laser output is presented. Powers in excess of 100 mW (>220 mW accounting for Fresnel losses) are obtained in a diffraction limited signal beam, corresponding to an array to diffraction limited beam transfer efficiency of 33%. Details of a reflection geometry phase conjugate master oscillator-power amplifier scheme which offers the possibility of power scaling between a number of high-power semiconductor laser amplifiers are presented. Using this technique, a 13-dB amplification of a diffraction limited signal beam is obtained using a commercially available, 10-stripe gain-guided device with no special coatings.

Single-Mode Multiwavelength Semiconductor Laser with Equivalent Distributed Fabry–Pérot Structure

2016 ◽  
Author(s):  
Jilin Zheng ◽  
Yuechun Shi ◽  
Yunshan Zhang ◽  
Song Liang ◽  
Daibing Zhou ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Single Mode ◽  
Fabry Perot

scholarly journals High-power single-mode triple-ridge waveguide semiconductor laser based on supersymmetry

AIP Advances ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 095216
Author(s):  
Xiaolei Zhao ◽  
Siwei Zeng ◽  
Lance Sweatt ◽  
Lin Zhu
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Single Mode ◽  
Ridge Waveguide

Electrically Pumped Photonic Crystal Distributed Feedback Quantum Cascade Lasers

2008 ◽  
Vol 1076 ◽  
Author(s):  
Manijeh Razeghi ◽  
Yanbo Bai ◽  
Steven Slivken ◽  
Wei Zhang
Keyword(s):  
Photonic Crystal ◽  
Quantum Cascade Lasers ◽  
Single Mode ◽  
Distributed Feedback ◽  
Broad Area ◽  
Quantum Cascade ◽  
Mode Operation ◽  
Fabry Perot ◽  
Electrically Pumped ◽  
Cascade Lasers

ABSTRACTIn parallel with the effort to improve the efficiency of Quantum cascade lasers (QCL) for high power continuous wave (CW) operations, the peak power in pulsed mode operation can be easily scaled up with larger emitting volumes, i.e., processing QCLs into broad area lasers. However, as the emitter width increases, multi-mode operation happens due to poorer lateral mode distinguishability. By putting a two dimensional photonic crystal distributed feedback (PCDFB) layer evanescently coupled to the main optical mode, both longitudinal and lateral beam coherence can be greatly enhanced, which makes single mode operation possible for broad area devices. For PCDFB laser performance, the linewidth enhancement factor (LEF) plays an important role in controlling the optical coherence. Being intersubband devices, QCLs have an intrinsically small LEF, thus serves better candidates over interband lasers for PCDFB applications. We demonstrate electrically pumped, room temperature, single mode operation of photonic crystal distributed feedback quantum cascade lasers emitting at λ ∼ 4.75 μm. Ridge waveguides of 50 μm and 100 μm width were fabricated with both PCDFB and Fabry-Perot feedback mechanisms. The Fabry-Perot device has a broad emitting spectrum and a broad far-field character. The PCDFB devices have primarily a single spectral mode and a diffraction limited far field characteristic with a full angular width at half-maximum of 4.8 degrees and 2.4 degrees for the 50 μm and 100 μm ridge widths, respectively.

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