C_2HD and ^13C_2H_2 absorption lines near 1530 nm for semiconductor-laser frequency locking

1994 ◽  
Vol 19 (22) ◽  
pp. 1885 ◽  
Author(s):  
C. Latrasse ◽  
R. Roberge ◽  
B. Villeneuve ◽  
M. Breton ◽  
M. Têtu ◽  
...  
2011 ◽  
Vol 82 (3) ◽  
pp. 033114 ◽  
Author(s):  
Natalie Kostinski ◽  
Ben A. Olsen ◽  
Robert Marsland ◽  
Bart H. McGuyer ◽  
William Happer

1993 ◽  
Author(s):  
Satoshi Yoshitake ◽  
Koji Akiyama ◽  
Miyako Iritani ◽  
Hidekazu Murayama

2019 ◽  
Vol 39 (10) ◽  
pp. 1028005
Author(s):  
闫庆 Yan Qing ◽  
袁萌 Yuan Meng ◽  
何甜甜 He Tiantian ◽  
陈宁 Chen Ning ◽  
刘晶晶 Liu Jingjing ◽  
...  

2016 ◽  
Vol 14 (12) ◽  
pp. 121401-121405 ◽  
Author(s):  
Yukun Luo Yukun Luo ◽  
Shuhua Yan Shuhua Yan ◽  
Aiai Jia Aiai Jia ◽  
Chunhua Wei Chunhua Wei ◽  
Zehuan Li Zehuan Li ◽  
...  

2012 ◽  
Vol 198-199 ◽  
pp. 1235-1240
Author(s):  
Xiao Dong Liu ◽  
Hai Dong Lei ◽  
Jian Jun Zhang

The Semiconductor laser frequency stabilization is the important study topic because of its increasing popular. We introduce a simply experimental setup method of the frequency stabilization of a 780 nm diode laser by only a tiny current in the laser audio modulation, photodiode receiver, and locking the transmission peaks. Use this method, the laser can be locked to the resonance peak of the Fabry-Perot cavity. The linewidth of laser is below 400 kHz, and it runs continually above 3 hours.


2010 ◽  
Vol 49 (5) ◽  
pp. 871 ◽  
Author(s):  
Weliton Soares Martins ◽  
Mayara Grilo ◽  
Manoel Brasileiro ◽  
Orlando di Lorenzo ◽  
Marcos Oriá ◽  
...  

2007 ◽  
Author(s):  
K. Nakano ◽  
S. Maehara ◽  
M. Yanagisawa ◽  
Y. Sekiya ◽  
T. Sato ◽  
...  

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