Cavity standing-wave and gain compression coefficient in semiconductor lasers

1994 ◽  
Vol 19 (9) ◽  
pp. 640 ◽  
Author(s):  
Antonio Mecozzi
Keyword(s):  
Semiconductor Lasers ◽  
Standing Wave ◽  
Gain Compression ◽  
Compression Coefficient

Steady State Characteristics of Semiconductor Lasers affected by Gain Compression

1999 ◽  
Vol 20 (3) ◽  
Author(s):  
Yonglin Tang ◽  
Yang Lu ◽  
Jianguo Chen ◽  
Dayi Li
Keyword(s):  
Steady State ◽  
Semiconductor Lasers ◽  
Gain Compression

Effect of gain compression on the FM nonlinear distortion in semiconductor lasers

1996 ◽  
Vol 32 (6) ◽  
pp. 981-985 ◽  
Author(s):  
H.M. Salgado ◽  
J.C.S. Castro ◽  
J.J. O'Reilly
Keyword(s):  
Semiconductor Lasers ◽  
Nonlinear Distortion ◽  
Gain Compression

Eels Under Standing Wave Conditions

1982 ◽  
Vol 40 ◽  
pp. 492-495
Author(s):  
O.L. Krivanek ◽  
J. TaftØ
Keyword(s):  
Standing Wave ◽  
Wave Conditions ◽  
Set Up ◽  
A Site ◽  
Complex Crystal

It is well known that a standing electron wavefield can be set up in a crystal such that its intensity peaks at the atomic sites or between the sites or in the case of more complex crystal, at one or another type of a site. The effect is usually referred to as channelling but this term is not entirely appropriate; by analogy with the more established particle channelling, electrons would have to be described as channelling either through the channels or through the channel walls, depending on the diffraction conditions.

Sign in / Sign up

Export Citation Format

Share Document