Thermal stability of photoinduced gratings and paramagnetic centers in Ge- and Ge/P-doped silica optical fibers

1993 ◽  
Vol 18 (12) ◽  
pp. 935 ◽  
Author(s):  
T. E. Tsai ◽  
E. J. Friebele ◽  
D. L. Griscom
Keyword(s):  
Thermal Stability ◽  
Optical Fibers ◽  
Paramagnetic Centers ◽  
Thermal Stability Of

Thermal Stability of Specialty Optical Fibers

2008 ◽  
Vol 26 (20) ◽  
pp. 3443-3451 ◽  
Author(s):  
Andrei A. Stolov ◽  
Debra A. Simoff ◽  
Jie Li
Keyword(s):  
Thermal Stability ◽  
Optical Fibers ◽  
Thermal Stability Of

scholarly journals Thermal Stability of Type II Modifications Inscribed by Femtosecond Laser in a Fiber Drawn from a 3D Printed Preform

2021 ◽  
Vol 11 (2) ◽  
pp. 600
Author(s):  
Yitao Wang ◽  
Shuen Wei ◽  
Maxime Cavillon ◽  
Benjamin Sapaly ◽  
Bertrand Poumellec ◽  
...  
Keyword(s):  
Thermal Stability ◽  
3D Printing ◽  
Femtosecond Laser ◽  
Optical Fibers ◽  
Thermal Performance ◽  
Single Mode ◽  
Type Ii ◽  
Fs Laser ◽  
3D Printed ◽  
Thermal Stability Of

Fiber drawing from a 3D printed perform was recently discussed to go beyond the limitations of conventional optical fiber manufacturing in terms of structure and materials. In this work, the photosensitivity of silica optical fibers to femtosecond laser light, and fabricated by 3D printing a preform, is investigated. The writing kinetics and the thermal performance of Type II modifications are studied by varying the laser pulse energy and investigating the birefringence response of the femtosecond (fs)-laser written structures. Compared with a conventional telecom single mode fiber (SMF28), the fiber made by 3D printing is found to have similar writing kinetics and thermal performance. Additionally, the thermal stability of the imprinted fs-laser induced nanostructures is investigated based on the Rayleigh–Plesset equation, describing a model of nanopores dissolution underpinning Type II modifications with thermal annealing.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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