scholarly journals Temperature dependence of optical properties for amorphous silicon at wavelengths of 6328 and 752 nm

1993 ◽  
Vol 18 (7) ◽  
pp. 540 ◽  
Author(s):  
Oguz Yavas ◽  
Nhan Do ◽  
Andrew C. Tam ◽  
P. T. Leung ◽  
Wing P. Leung ◽  
...  
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Amorphous Silicon

Optical Phenomena at the Absorption Edge of Crystalline and Amorphous Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
George D. Cody
Keyword(s):  
Optical Properties ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Absorption Edge ◽  
Crystalline Silicon ◽  
Dipole Matrix Element ◽  
Silicon Hydride ◽  
Energy Gaps ◽  
Site Disorder ◽  
Optical Phenomena

ABSTRACTOptical phenomena associated with the absorption edge of crystalline silicon (c-Si) and amorphous silicon hydride (a-Si:H) are presented and compared. The optical properties discussed include the energy dependence, dipole matrix element and density of states associated with the absorption edge; the temperature dependence of the relevant optical energy gaps, and finally the magnitude and temperature dependence of the slope of the Urbach edge for each material. The comparison suggests that the optical properties of the two materials are closely related and that the absorption edge of a-Si:H may be derived from the effect of site disorder on the zone center direct gap of c-Si.

Mechanical Spectroscopy Study on the Light Soaking Effect on Hydrogenated Amorphous Silicon

2012 ◽  
Vol 184 ◽  
pp. 416-421 ◽  
Author(s):  
H. Mizubayashi ◽  
I. Sakata ◽  
H. Tanimoto
Keyword(s):  
Internal Friction ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Distribution ◽  
Activation Energies ◽  
Mechanical Spectroscopy ◽  
Induced Changes ◽  
Mild Temperature ◽  
Hydrogenated Amorphous

For hydrogenated amorphous silicon (a-Si:H) films deposited at temperatures between 423 K and 623 K (a-Si:H423Kand so on), the light-induced changes in the internal friction between 80 K and 400 K were studied. The internal friction is associated with H2motion in microvoid networks, and shows the mild temperature dependence between about 80 K and 300 K (Q-180-300K) and the almost linear increase above 300 K (Q-1>300K). BothQ-180-300KandQ-1>300Kdecrease with increasing the deposition temperature, and show the mild temperature dependence ina-Si:H623K. The white light soaking with 100 mW/cm2(WLS100and so on) below 300 K caused a change inQ-180-300Kand no changes inQ-1>300K, respectively, and the light-induced changes inQ-180-300Krecovered after annealing at 423 K. The wide distribution of activation energies for H2motions between microvoids indicate that most of neighboring microvoids are connected through windows, i.e., the microvoid networks are existing ina-Si:H, and the spatially loose or solid structures are responsible for the low or high activation energies for the H2motion between microvoids, respectively. Furthermore, the light-induced hydrogen evolution (LIHE) was observed for WLS200to WLS400in a vacuum between 400 and 500 K, resulting in the disappearance of the internal friction due to the H2motion in the microvoid network.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Temperature Dependence of the Fading Speed of Blue-Green Produced by Cu Ion Implantation into LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
Yukinori Saito ◽  
Shinji Suganomata ◽  
P. Moretti
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Visible Region ◽  
Host Crystal

The optical properties of colorless and transparent crystals can be changed by introducing impurities into the crystal and depend on the elements added. What kind of elements should be added depends on how one modifies the properties. If one wants to put beautiful color on some colorless and transparent crystals such as Al203, SiO2, LiNbO3, etc., it is necessary to produce definite absorption peaks in the visible region for the crystals. In case of using ion implantation for introducing impurities, there is essentially no limitation to the combination of host crystal and impurities.

On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

2009 ◽  
Vol 24 (8) ◽  
pp. 2561-2573 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Eric Eisenbraun ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Optical Properties ◽  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Cross Section ◽  
Silicon Oxycarbide ◽  
Nuclear Reaction Analysis ◽  
Structure Morphology ◽  
Composition Structure ◽  
Hydrogenated Amorphous

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.

scholarly journals Temperature dependent optical properties of amorphous silicon for diode laser crystallization

2012 ◽  
Vol 20 (S6) ◽  
pp. A856 ◽  
Author(s):  
Joachim Bergmann ◽  
Martin Heusinger ◽  
Gudrun Andrä ◽  
Fritz Falk
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Crystallization ◽  
Temperature Dependent
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