Refraction effects associated with multiphoton ionization and ultrashort-pulse laser propagation in plasma waveguides

1991 ◽  
Vol 16 (11) ◽  
pp. 835 ◽  
Author(s):  
R. Rankin ◽  
N. H. Burnett ◽  
P. B. Corkum ◽  
C. E. Capjack
Keyword(s):  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Multiphoton Ionization ◽  
Ultrashort Pulse Laser ◽  
Laser Propagation ◽  
Plasma Waveguides

Polarization-dependent Memory of Light via Ultrashort Pulse Laser Irradiation

PIERS Online ◽  
2008 ◽  
Vol 4 (2) ◽  
pp. 221-226
Author(s):  
Yasuhiko Shimotsuma ◽  
Masaaki Sakakura ◽  
Peter G. Kazansky ◽  
Jianrong Qiu ◽  
Kiyotaka Miura ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Pulse Laser Irradiation ◽  
Ultrashort Pulse Laser

scholarly journals Simulation of the laser-material interaction of ultrashort pulse laser processing of silicon nitride workpieces and the key factors in the ablation process

2021 ◽  
Author(s):  
Babak Soltani ◽  
Faramarz Hojati ◽  
Amir Daneshi ◽  
Bahman Azarhoushang
Keyword(s):  
Mathematical Model ◽  
Laser Ablation ◽  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Laser Processing ◽  
Laser Power ◽  
Removal Rate ◽  
Ultrashort Pulse Laser ◽  
Laser Material ◽  
Material Interaction

AbstractUnderstanding the laser ablation mechanism is highly essential to find the effect of different laser parameters on the quality of the laser ablation. A mathematical model was developed in the current investigation to calculate the material removal rate and ablation depth. Laser cuts were created on the workpiece with different laser scan speeds from 1 to 10 mm s−1 by an ultrashort pulse laser with a wavelength of about 1000 nm. The calculated depths of laser cuts were validated via practical experiments. The variation of the laser power intensity on the workpiece’s surface during laser radiation was also calculated. The mathematical model has determined the laser-material interaction mechanism for different laser intensities. The practical sublimation temperature and ablated material temperature during laser processing are other data that the model calculates. The results show that in laser power intensities (IL) higher than 1.5 × 109 W cm−2, the laser-material interaction is multiphoton ionisation with no effects of thermal reaction, while in lower values of IL, there are effects of thermal damages and HAZ adjacent to the laser cut. The angle of incidence is an essential factor in altering incident IL on the surface of the workpiece during laser processing, which changes with increasing depth of the laser cut.

Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips

2021 ◽  
Vol 3 (2) ◽  
pp. 778-788
Author(s):  
Nursidik Yulianto ◽  
Grandprix T. M. Kadja ◽  
Steffen Bornemann ◽  
Soniya Gahlawat ◽  
Nurhalis Majid ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Light Emitting Diode ◽  
Ultrashort Pulse Laser ◽  
Light Emitting ◽  
Lift Off

Numerical modeling of ultrashort-pulse laser ablation of silicon

2009 ◽  
Vol 255 (17) ◽  
pp. 7605-7609 ◽  
Author(s):  
D.P. Korfiatis ◽  
K.-A. Th. Thoma ◽  
J.C. Vardaxoglou
Keyword(s):  
Numerical Modeling ◽  
Laser Ablation ◽  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Pulse Laser Ablation ◽  
Ultrashort Pulse Laser
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