On-Chip Optical Interconnects Integrated with Laser and Photodetector Using Three-Dimensional Silicon Waveguides

Author(s):  
Po-Kuan Shen ◽  
Chin-Ta Chen ◽  
Chia-Hao Chang ◽  
Chien-Yu Chiu ◽  
Chia-Chi Chang ◽  
...  
Frequenz ◽  
2020 ◽  
Vol 74 (7-8) ◽  
pp. 271-276
Author(s):  
Seyed Hadi Badri ◽  
Mohsen Mohammadzadeh Gilarlue

AbstractMode-division multiplexing (MDM) in silicon-on-insulator platform is an emerging technology to increase the channel number of a single wavelength carrier by the number of modes and consequently increase the transmission capacity of on-chip optical interconnects. We propose and theoretically demonstrate a multimode branching structure based on the truncated Eaton lens. The proposed T-junctions efficiently convert the higher-order modes into fundamental modes; therefore, they can be potentially employed to manipulate modes in MDM systems. The designed T-junctions are implemented by varying the guiding layer’s thickness on a silicon-on-insulator platform. The three-dimensional simulations verify that the proposed structures can split the TE2 (TE1) mode into the fundamental modes with an average transmitted power of 32% (47%) in a 1550–1600 nm bandwidth.


2013 ◽  
Author(s):  
David Kwong ◽  
Amir Hosseini ◽  
John Covey ◽  
Yang Zhang ◽  
Xiaochuan Xu ◽  
...  

1989 ◽  
Vol 147 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
R. A. Soref ◽  
P. Sioshansi

AbstractThis paper will address the formation of SIMOX structures with thick and multiple buried SiO2 layers by multiple oxygen implantation and growth of epitaxial Si by chemical vapor deposition (CVD). Our results indicate that SIMOX material can be produced with a buried layer of any thickness or with any number of distinct buried oxide layers and distinct silicon layers. Thick and double buried SiO2 layer material may be useful for high voltage isolation and electric field shielding.In addition, we have demonstrated optical waveguide action in SIMOX wafers. This suggests that in a double buried SiO2 layer system, three dimensional stacked integration of silicon waveguides is possible, including two level optical interconnects.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shanshan Chen ◽  
Zhiguang Liu ◽  
Huifeng Du ◽  
Chengchun Tang ◽  
Chang-Yin Ji ◽  
...  

AbstractKirigami, with facile and automated fashion of three-dimensional (3D) transformations, offers an unconventional approach for realizing cutting-edge optical nano-electromechanical systems. Here, we demonstrate an on-chip and electromechanically reconfigurable nano-kirigami with optical functionalities. The nano-electromechanical system is built on an Au/SiO2/Si substrate and operated via attractive electrostatic forces between the top gold nanostructure and bottom silicon substrate. Large-range nano-kirigami like 3D deformations are clearly observed and reversibly engineered, with scalable pitch size down to 0.975 μm. Broadband nonresonant and narrowband resonant optical reconfigurations are achieved at visible and near-infrared wavelengths, respectively, with a high modulation contrast up to 494%. On-chip modulation of optical helicity is further demonstrated in submicron nano-kirigami at near-infrared wavelengths. Such small-size and high-contrast reconfigurable optical nano-kirigami provides advanced methodologies and platforms for versatile on-chip manipulation of light at nanoscale.


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).


Author(s):  
Khadidja Gaffour ◽  
Mohammed Kamel Benhaoua ◽  
Abou El Hassan Benyamina ◽  
Amit Kumar Singh

2006 ◽  
Vol 970 ◽  
Author(s):  
Manabu Bonkohara ◽  
Makoto Motoyoshi ◽  
Kazutoshi Kamibayashi ◽  
Mitsumasa Koyanagi

ABSTRACTRecently the development of three dimensional LSI (3D-LSI) has been accelerated and its stage has changed from the research level or limited production level to the investigation level with a view to mass production. This paper describes the current and the future 3D-LSI technologies which we have considered and imagined. The current technology is taken our Chip Size Package (CSP) for sensor device, for instance. In the future technology, there are the five key technologies are described. And considering con and pro of the current 3D LSI stacked approach, such as CoC (Chip on Chip), CoW (Chip on Wafer) and WoW (Wafer on Wafer), We confirmed that CoW combined with Super-Smart-Stack (SSS™) technology will shorten the process time per chip at the same level as WoW approach and is effective to minimize process cost.


2021 ◽  
Author(s):  
Yuling Shang ◽  
Wenjie Guo ◽  
Xiang He ◽  
Jinzhuo Zhou ◽  
Yaya Yan ◽  
...  

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