scholarly journals Frequency response and carrier escape time of InGaAs quantum well-dots photodiode

2021 ◽  
Author(s):  
Alexey Zhukov ◽  
Sergey Blokhin ◽  
Nikolai Maleev ◽  
Natalia Kryzhanovskaya ◽  
Eduard Moiseev ◽  
...  
Keyword(s):  
Quantum Well ◽  
Frequency Response ◽  
Escape Time ◽  
Carrier Escape ◽  
Ingaas Quantum Well

Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

2014 ◽  
Vol 4 (2) ◽  
pp. 607-613 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Hiromasa Fujii ◽  
Yunpeng Wang ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Collection Efficiency ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Carrier Collection ◽  
Carrier Escape

Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems

1994 ◽  
Vol 64 (23) ◽  
pp. 3130-3132 ◽  
Author(s):  
H. Uenohara ◽  
R. Takahashi ◽  
Y. Kawamura ◽  
H. Iwamura
Keyword(s):  
Quantum Well ◽  
Time Dependence ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Carrier Escape

Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers

1996 ◽  
Author(s):  
Ignacio Esquivias ◽  
Beatriz Romero Herrero ◽  
S. Weisser ◽  
Konrad Czotscher ◽  
John D. Ralston ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Escape Time ◽  
Carrier Escape

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

scholarly journals 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

2017 ◽  
Vol 9 (5) ◽  
pp. 1-8
Author(s):  
Bocang Qiu ◽  
Hai Martin Hu ◽  
Weimin Wang ◽  
James Ho ◽  
Wenbin Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Ingaas Quantum Well

Hybrid InGaAs quantum well–dots nanostructures for light-emitting and photo-voltaic applications

2015 ◽  
Vol 26 (38) ◽  
pp. 385202 ◽  
Author(s):  
S A Mintairov ◽  
N A Kalyuzhnyy ◽  
V M Lantratov ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting ◽  
Photo Voltaic ◽  
Ingaas Quantum Well

scholarly journals Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

2020 ◽  
Vol 28 (16) ◽  
pp. 23796
Author(s):  
Yi Chao Chow ◽  
Changmin Lee ◽  
Matthew S. Wong ◽  
Yuh-Renn Wu ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Carrier Escape
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