scholarly journals Monolithic integration of laser onto multilayer silicon nitride photonic integrated circuits with high efficiency at telecom wavelength

2021 ◽  
Author(s):  
Yisu Yang ◽  
Hao Zhao ◽  
Xiaomin Ren ◽  
Yongqing Huang
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
High Efficiency ◽  
Photonic Integrated Circuits ◽  
Monolithic Integration ◽  
Telecom Wavelength

scholarly journals A high efficiency silicon nitride waveguide grating coupler with a multilayer bottom reflector

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jianxun Hong ◽  
Andrew M. Spring ◽  
Feng Qiu ◽  
Shiyoshi Yokoyama
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
High Efficiency ◽  
Photonic Integrated Circuits ◽  
Coupling Efficiency ◽  
Optical Characterization ◽  
Grating Coupler ◽  
Waveguide Grating ◽  
Quarter Wave

Abstract We propose a high efficiency apodized grating coupler with a bottom reflector for silicon nitride photonic integrated circuits. The reflector consists of a stack of alternate silicon nitride and silicon dioxide quarter-wave films. The design, fabrication and optical characterization of the couplers has been presented. The measured fiber to detector insertion loss was −3.5 dB which corresponds to a peak coupling efficiency of −1.75 dB. A 3 dB wavelength bandwidth of 76.34 nm was demonstrated for the grating coupler with a 20-layer reflector. The fabrication process is CMOS-compatible and requires only a single etching step.

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits

2020 ◽  
Author(s):  
Jeroen Goyvaerts ◽  
Sulakshna Kumari ◽  
Sarah Uvin ◽  
Jing Zhang ◽  
Roel Baets ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits

scholarly journals Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform

2019 ◽  
Vol 220 ◽  
pp. 03012
Author(s):  
Ilia Elmanov ◽  
Anna Elmanova ◽  
Sophia Komrakova ◽  
Alexander Golikov ◽  
Natalya Kaurova ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Etching Rate ◽  
High Ratio ◽  
Practical Application ◽  
Non Destructive

In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.

scholarly journals Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 195436-195446
Author(s):  
Tarun Sharma ◽  
Jiaqi Wang ◽  
Brajesh Kumar Kaushik ◽  
Zhenzhou Cheng ◽  
Roshan Kumar ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Recent Progress ◽  
Photonic Integrated Circuits

Gallium- and Silicon Nitride-Based Photonic Integrated Circuits for Visible Wavelengths

2020 ◽  
Author(s):  
Riazul Arefin ◽  
Sujit Ramachandra ◽  
Hyemin Jung ◽  
Syed M. N. Hasan ◽  
Weicheng You ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Visible Wavelengths

Long-Range Static and Dynamic Thermal Crosstalk in Silicon-Nitride (SiNx) Photonic Integrated Circuits

2018 ◽  
Author(s):  
Siva S. Yegnanarayanan ◽  
Ryan T. Maxson ◽  
Cheryl Sorace-Agaskar ◽  
Dave Kharas ◽  
Paul W. Juodawlkis
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Long Range ◽  
Photonic Integrated Circuits

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

2017 ◽  
Vol 35 (4) ◽  
pp. 639-649 ◽  
Author(s):  
Abdul Rahim ◽  
Eva Ryckeboer ◽  
Ananth Z. Subramanian ◽  
Stephane Clemmen ◽  
Bart Kuyken ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Silicon Photonics ◽  
Photonic Integrated Circuits
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