scholarly journals Free-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon

2021 ◽  
Author(s):  
Andrey Ovchinnikov ◽  
Oleg Chefonov ◽  
M.B. Agranat ◽  
Elena Mishina ◽  
Andrey Kudryavtsev ◽  
...  
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Terahertz Pulses

Free-Carrier Generation via Exciton-Phonon and Exciton-Impurity Interaction in Ge Crystals

1976 ◽  
Vol 74 (1) ◽  
pp. 81-89 ◽  
Author(s):  
B. V. Novikov ◽  
N. S. Sokolov ◽  
S. V. Gastev
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Impurity Interaction

Free Carrier Generation and Recombination in Polymer-Wrapped Semiconducting Carbon Nanotube Films and Heterojunctions

2013 ◽  
Vol 4 (21) ◽  
pp. 3550-3559 ◽  
Author(s):  
Dominick J. Bindl ◽  
Andrew J. Ferguson ◽  
Meng-Yin Wu ◽  
Nikos Kopidakis ◽  
Jeffrey L. Blackburn ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Free Carrier ◽  
Carrier Generation ◽  
Nanotube Films

DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range

1996 ◽  
Author(s):  
A. E. Vidavskii ◽  
Valeri I. Kovalev ◽  
V. M. Raukhman
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Two Photon

Plasmooptoelectronic tuning of optical properties and SERS response of ordered silver grating by free carrier generation

RSC Advances ◽  
2015 ◽  
Vol 5 (113) ◽  
pp. 92869-92877 ◽  
Author(s):  
Y. Kalachyova ◽  
D. Alkhimova ◽  
M. Kostejn ◽  
P. Machac ◽  
V. Svorcik ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Current ◽  
Free Carrier ◽  
Carrier Generation

Electrical current induced reversible tuning of the optical properties of ordered silver gratings.

Photo-oxidation and the Absence of Photodarkening in Ge2Sb2Te5 Phase Change Material

2006 ◽  
Vol 918 ◽  
Author(s):  
Bong-Sub Lee ◽  
Ying Xiao ◽  
Stephen G. Bishop ◽  
John R. Abelson ◽  
Simone Raoux ◽  
...  
Keyword(s):  
Phase Change ◽  
Secondary Ion Mass Spectrometry ◽  
Free Carrier ◽  
Carrier Generation ◽  
Photo Oxidation ◽  
Optical Irradiation ◽  
The Mean ◽  
Change Material ◽  
Secondary Ion ◽  
Change Memory

AbstractGe2Sb2Te5 is under intense investigation for phase-change memory devices, including rewriteable DVDs where optical illumination is used to switch between the glassy and crystalline states. We investigate the influence of optical irradiation on amorphous phase. Many chalcogenides display photo-oxidation, photodarkening or photo-bleaching, but little has been reported on the Ge-Sb-Te system. Using spectroscopic ellipsometry (SE) and secondary ion mass spectrometry, we determine that the samples have a strong tendency to photo-oxidize; if this is not accounted for, then the analysis of SE data appears to show photodarkening. Other authors recently reported photodarkening in nonstoichiometric GexSb20-xTe80 [Pamukchieva et al., Proc. SPIE 5581, 608 (2004); Pamukchieva et al., J. Optoelectron. Adv. Mater 7, 1277 (2005)], but our analysis suggests that the changes were also the result of photo-oxidation. The oxide has lower value of (n, k) than Ge2Sb2Te5, and can be etched by hydrofluoric acid or water. The photo-oxidation is presumably the result of free carrier generation in the Ge2Sb2Te5. Our observation of negligible photodarkening is consistent with previous works that found less photodarkening in tellurides compared with selenides or sulfides, and that an increase in the mean coordination number, here by Ge addition, further reduces the photodarkening effect.

Free Carrier Generation Due to Exciton-Exciton Interaction in Cd(S, Se)

1970 ◽  
Vol 29 (2) ◽  
pp. 520-520 ◽  
Author(s):  
Hiroshi Kukimoto ◽  
Shigeo Shionoya ◽  
Taibun Kamejima
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Exciton Interaction
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