scholarly journals Ablation characteristics and material removal mechanism of single-crystal diamond processed by nanosecond and picosecond lasers

2021 ◽  
Author(s):  
Hualu Wang ◽  
Qiuling Wen ◽  
Xipeng Xu ◽  
Jing Lu ◽  
Feng Jiang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Single Crystal Diamond ◽  
Picosecond Lasers ◽  
Ablation Characteristics

Fundamental study on material removal mechanism in single-crystal germanium

2021 ◽  
pp. 103773
Author(s):  
Ruiwen Geng ◽  
Xiaojing Yang ◽  
Qiming Xie ◽  
Jianguo Xiao ◽  
Wanqing Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Fundamental Study

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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