scholarly journals Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy

2021 ◽  
Author(s):  
Ryota Ishii ◽  
Yuji Koyama ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Thermal Droop ◽  
Microscopic Origin

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL12
Author(s):  
Tom J. Badcock ◽  
Phil Dawson ◽  
Rachel A. Oliver ◽  
Menno J. Kappers ◽  
Colin J. Humphreys
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Recombination Dynamics

scholarly journals Experimental Observation of Temperature-Driven Topological Phase Transition in HgTe/CdHgTe Quantum Wells

2019 ◽  
Author(s):  
Maksim Zholudev ◽  
Aleksandr Kadykov ◽  
Mikhail Fadeev ◽  
Michal Marcinkiewicz ◽  
Sandra Ruffenach ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Phase Transition ◽  
Quantum Wells ◽  
Topological Insulator ◽  
Critical Magnetic Field ◽  
Topological Phase ◽  
Temperature Dependent ◽  
Transition Parameter ◽  
Topological Phase Transition ◽  
Band Insulator

We report on comparison between temperature-dependent magneto¬absorption and magnetotransport spectroscopy of HgTe/CdHgTe quantum wells in terms of detection of phase transition between topological insulator and band insulator states. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases, yet magnetotransport method is shown to have advantages for clear manifestation of the phase transition with accurate quantitative values of transition parameter (i.e. critical magnetic field Bc).

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

2016 ◽  
Vol 14 (4) ◽  
pp. 042302-42306 ◽  
Author(s):  
Haiyan Lü Haiyan Lü ◽  
Yuanjie Lü Yuanjie Lü ◽  
Qiang Wang Qiang Wang ◽  
Jianfei Li Jianfei Li ◽  
Zhihong Feng Zhihong Feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells

Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells

2011 ◽  
Vol 32 (2) ◽  
pp. 164-168
Author(s):  
叶志成 YE Zhi-cheng ◽  
舒永春 SHU Yong-chun ◽  
曹雪 CAO Xue ◽  
龚亮 GONG Liang ◽  
姚江宏 YAO Jiang-hong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Effect ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature‐dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells

1996 ◽  
Vol 79 (4) ◽  
pp. 2139-2141 ◽  
Author(s):  
W. Z. Shen ◽  
Y. Chang ◽  
S. C. Shen ◽  
W. G. Tang ◽  
Y. Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent

scholarly journals Investigation of temperature-dependent photoluminescence in multi-quantum wells

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yutao Fang ◽  
Lu Wang ◽  
Qingling Sun ◽  
Taiping Lu ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

scholarly journals Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

2020 ◽  
Vol 257 (6) ◽  
pp. 2000016 ◽  
Author(s):  
Carsten Netzel ◽  
Veit Hoffmann ◽  
Jens W. Tomm ◽  
Felix Mahler ◽  
Sven Einfeldt ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells
Sign in / Sign up

Export Citation Format

Share Document