scholarly journals Optimizing metal grating back reflectors for III-V-on-silicon multijunction solar cells

2021 ◽  
Author(s):  
Peter Tillmann ◽  
Benedikt Bläsi ◽  
Sven Burger ◽  
Martin Hammerschmidt ◽  
Oliver Hoehn ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Grating ◽  
Multijunction Solar Cells ◽  
Back Reflectors

Advanced Deposition Phase Diagrams for Guiding Si:H-Based Multijunction Solar Cells

2007 ◽  
Vol 989 ◽  
Author(s):  
Jason Collins ◽  
Nikolas J. Podraza ◽  
Jian Li ◽  
Xinmin Cao ◽  
Xunming Deng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Phase Diagrams ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Hydrogenated Silicon ◽  
Si Substrates ◽  
Cell Structures ◽  
Multijunction Solar Cells ◽  
Back Reflectors

AbstractPhase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) processes for intrinsic hydrogenated silicon (Si:H) and silicon-germanium alloy (Si1-xGex:H) thin films using crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1-xGex:H processes are applied for the top and middle i-layers of triple-junction a-Si:H-based n-i-p solar cells fabricated at University of Toledo. Identical n/i cell structures were co-deposited on textured Ag/ZnO back-reflectors in order to correlate the phase diagram and the performance of single-junction solar cells, the latter completed through over-deposition of the p-layer and top contact. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1-xGex:H solar cells are obtained when the i-layers are prepared under maximal H2 dilution conditions.

Study on Improving Light Absorption of Si Thin-Film Solar Cells with Metal Grating and Photonic Crystals back Reflectors

2016 ◽  
Vol 53 (5) ◽  
pp. 050501
Author(s):  
何孝金 He Xiaojin ◽  
刘敏 Liu Min ◽  
张姚姚 Zhang Yaoyao ◽  
刘雪芹 Liu Xueqin
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Photonic Crystals ◽  
Light Absorption ◽  
Thin Film Solar Cells ◽  
Metal Grating ◽  
Back Reflectors ◽  
Si Thin Film

scholarly journals Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Experimental Assessment ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato
Keyword(s):  
Solar Cells ◽  
Tunnel Diodes ◽  
Multijunction Solar Cells

Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 ◽  
Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Engineered Substrates

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

III‐V//Si multijunction solar cells with 30% efficiency using smart stack technology with Pd nanoparticle array

2019 ◽  
Vol 28 (1) ◽  
pp. 16-24 ◽  
Author(s):  
Kikuo Makita ◽  
Hidenori Mizuno ◽  
Takeshi Tayagaki ◽  
Taketo Aihara ◽  
Ryuji Oshima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanoparticle Array ◽  
Pd Nanoparticle ◽  
Multijunction Solar Cells

Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence

2011 ◽  
Vol 50 (9) ◽  
pp. 092302 ◽  
Author(s):  
Gia-Wei Shu ◽  
Chiun-Hsiang Tung ◽  
Shr-Chang Tung ◽  
Po-Chen Su ◽  
Ji-Lin Shen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Junction Temperature ◽  
Multijunction Solar Cells
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