560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
2014 ◽
Vol 405
◽
pp. 97-101
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2011 ◽
Vol 50
(3R)
◽
pp. 035602
◽
2011 ◽
Vol 50
◽
pp. 035602
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2012 ◽
Vol 27
(2)
◽
pp. 024003
◽
2013 ◽
Vol 43
(4)
◽
pp. 814-818
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