scholarly journals Design of a broadband Ge1−xSix electro-absorption modulator based on the Franz-Keldysh effect with thermal tuning

2020 ◽  
Vol 28 (5) ◽  
pp. 7585
Author(s):  
Longsheng Wu ◽  
Yue Zhou ◽  
Yan Cai ◽  
Xiyuan Cao ◽  
Ruxue Wang ◽  
...  
2008 ◽  
Vol 103 (9) ◽  
pp. 093107 ◽  
Author(s):  
Lalgudi V. Natarajan ◽  
Jeremy M. Wofford ◽  
Vincent P. Tondiglia ◽  
Richard L. Sutherland ◽  
Hilmar Koerner ◽  
...  

2003 ◽  
Vol 67 (16) ◽  
Author(s):  
C. J. Dent ◽  
B. N. Murdin ◽  
I. Galbraith

Author(s):  
Guoliang Li ◽  
Xuezhe Zheng ◽  
Jin Yao ◽  
Hiren Thacker ◽  
Ivan Shubin ◽  
...  

2004 ◽  
Vol 34 (2b) ◽  
pp. 663-665 ◽  
Author(s):  
Justino R. Madureira ◽  
Marcelo Z. Maialle ◽  
Marcos H. Degani

Author(s):  
Facundo Villavicencio ◽  
Jorge Mario Ferreyra ◽  
German Bridoux ◽  
Manuel Villafuerte

Abstract We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the confined levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential model. We present exact solutions for this potential in the frame of the effective mass approximation and they are valid for electron or hole confinement potential. This model provides a more adequate physical scenario than the wedge potential since it takes into account the charge balance involved in the band bending potential. These results allow to treat confined potential problems as in the case of a two-dimensional electron gas (2DEG) in a simplified way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh effect.


2018 ◽  
Vol 8 (9) ◽  
pp. 2954 ◽  
Author(s):  
Ruoying Kanyang ◽  
Fan Zhang ◽  
Genquan Han ◽  
Yan Liu ◽  
Yao Shao ◽  
...  

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