scholarly journals On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators

2020 ◽  
Vol 28 (6) ◽  
pp. 8668 ◽  
Author(s):  
Sheng Hang ◽  
Yonghui Zhang ◽  
Yuanbin Gao ◽  
Xuejiao Qiu ◽  
Jianquan Kou ◽  
...  
Keyword(s):  
Hole Confinement

Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire

1999 ◽  
Vol 20 (4) ◽  
pp. 173-175 ◽  
Author(s):  
S.J. Mathew ◽  
Guofu Niu ◽  
W.B. Dubbelday ◽  
J.D. Cressler ◽  
J.A. Ott ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Hole Confinement

scholarly journals FOUR-PARTICLE ANYON EXCITON: BOSON APPROXIMATION

1995 ◽  
Vol 09 (02) ◽  
pp. 123-133 ◽  
Author(s):  
M. E. Portnoi ◽  
E. I. Rashba
Keyword(s):  
Angular Momentum ◽  
Electron Density ◽  
Ground State ◽  
Hypergeometric Functions ◽  
Energy Levels ◽  
Confluent Hypergeometric Functions ◽  
Full Symmetry ◽  
Hole Confinement ◽  
Boson Approximation

A theory of anyon excitons consisting of a valence hole and three quasielectrons with electric charges –e/3 is presented. A full symmetry classification of the k = 0 states is given, where k is the exciton momentum. The energy levels of these states are expressed by quadratures of confluent hypergeometric functions. It is shown that the angular momentum L of the exciton ground state depends on the distance between the electron and hole confinement planes and takes the values L = 3n, where n is an integer. With increasing k the electron density shows a spectacular splitting on bundles. At first a single anyon splits off of the two-anyon core, and finally all anyons become separated.

Linear bounded potential model for semiconductor band bending

2022 ◽  
Author(s):  
Facundo Villavicencio ◽  
Jorge Mario Ferreyra ◽  
German Bridoux ◽  
Manuel Villafuerte
Keyword(s):  
Potential Model ◽  
Simple Expression ◽  
Linear Potential ◽  
Charge Balance ◽  
Band Bending ◽  
Mass Approximation ◽  
Hole Confinement ◽  
Dimensional Electron Gas ◽  
Analytical Expressions ◽  
Franz Keldysh Effect

Abstract We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the confined levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential model. We present exact solutions for this potential in the frame of the effective mass approximation and they are valid for electron or hole confinement potential. This model provides a more adequate physical scenario than the wedge potential since it takes into account the charge balance involved in the band bending potential. These results allow to treat confined potential problems as in the case of a two-dimensional electron gas (2DEG) in a simplified way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh effect.

scholarly journals Materials for Future Quantum Dot-Based Memories

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
T. Nowozin ◽  
D. Bimberg ◽  
K. Daqrouq ◽  
M. N. Ajour ◽  
M. Awedh
Keyword(s):  
Cross Sections ◽  
Room Temperature ◽  
Storage Time ◽  
Thermal Emission ◽  
Current Status ◽  
Strong Electron ◽  
Self Organized ◽  
Hole Confinement ◽  
Storage Times ◽  
Capture Cross Sections

The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed. Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years. For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed. For hole storage, GaSb/Al0.9Ga0.1As, GaSb/GaP, and GaSb/AlP are promising candidates.

Hole confinement and mobility in heterostructure Si/Ge/Si p-channel metal–oxide–semiconductor field effect transistors

1997 ◽  
Vol 81 (12) ◽  
pp. 8079-8083 ◽  
Author(s):  
B. R. Cyca ◽  
K. G. Robins ◽  
N. G. Tarr ◽  
D. X. Xu ◽  
J.-P. Noel ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Hole Confinement

scholarly journals Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes

2014 ◽  
Vol 6 (2) ◽  
pp. 1-9 ◽  
Author(s):  
Bilal Janjua ◽  
T. K. Ng ◽  
Ahmed Y. Alyamani ◽  
M. M. El-Desouki ◽  
B. S. Ooi
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Asymmetric Quantum ◽  
Hole Confinement

Hole Confinement in a Si/GeSi/Si Quantum Well on SIMOX

1993 ◽  
Author(s):  
D. K. Nayak ◽  
J. C. S. Woo ◽  
J. S. Park ◽  
K. L. Wang ◽  
K. P. MacWilliams
Keyword(s):  
Quantum Well ◽  
Hole Confinement
Sign in / Sign up

Export Citation Format

Share Document