scholarly journals Near-infrared optics of nanoparticles embedded silica thin films

2019 ◽  
Vol 27 (4) ◽  
pp. A148 ◽  
Author(s):  
Yanpei Tian ◽  
Alok Ghanekar ◽  
Lijuan Qian ◽  
Matthew Ricci ◽  
Xiaojie Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Optics ◽  
Silica Thin Films

Improved sensitization efficiency in Er3+ ions and SnO2 nanocrystals co-doped silica thin films

2015 ◽  
Vol 17 (18) ◽  
pp. 11974-11980 ◽  
Author(s):  
Xiaowei Zhang ◽  
Shaobing Lin ◽  
Tao Lin ◽  
Pei Zhang ◽  
Jun Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Near Infrared ◽  
Sno2 Nanocrystals ◽  
Silica Thin Films ◽  
Sensitization Efficiency ◽  
Co Doped

High performance near-infrared luminous using broadband UV pumping.

scholarly journals Near infrared photoluminescence from bismuth-doped nanoporous silica thin films

2013 ◽  
Vol 114 (3) ◽  
pp. 033524 ◽  
Author(s):  
Sa chu rong gui ◽  
Kenji Imakita ◽  
Minoru Fujii ◽  
Zhenhua Bai ◽  
Shinji Hayashi
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Nanoporous Silica ◽  
Silica Thin Films

Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films

2019 ◽  
Vol 40 (5) ◽  
pp. 623-629
Author(s):  
陈若望 CHEN Ruo-wang ◽  
汪鹏君 WANG Peng-jun ◽  
张晓伟 ZHANG Xiao-wei ◽  
张跃军 ZHANG Yue-jun ◽  
张会红 ZHANG Hui-hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Spectral Modulation ◽  
Silica Thin Films ◽  
Infrared Spectral ◽  
Co Doped

Tunable quantum dot arrays as efficient sensitizers for enhanced near-infrared electroluminescence of erbium ions

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 4138-4146 ◽  
Author(s):  
X. W. Zhang ◽  
T. Lin ◽  
P. Zhang ◽  
H. C. Song ◽  
H. Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Near Infrared ◽  
Erbium Ions ◽  
Silica Thin Films

Various metal oxide quantum dot array doped silica thin films were designed for greatly improving the near-infrared EL performance of Er3+.

Enhanced and wavelength-tunable near-infrared luminescence from bismuth-doped silica thin films with Au nanocrystals

2019 ◽  
Vol 772 ◽  
pp. 332-336 ◽  
Author(s):  
Xiaowei Zhang ◽  
Pengjun Wang ◽  
Dongfeng Qi ◽  
Yanyan Huang ◽  
Bolin Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Wavelength Tunable ◽  
Infrared Luminescence ◽  
Silica Thin Films

scholarly journals High performing flexible optoelectronic devices using thin films of topological insulator

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Nonlinear Optical Properties ◽  
Metallic Surface ◽  
Strong Light ◽  
High Performing ◽  
Decay Times

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sem Images ◽  
Fluorescence Emission Spectra ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

scholarly journals Two-dimensional perovskites with alternating cations in the interlayer space for stable light-emitting diodes

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yiyue Zhang ◽  
Masoumeh Keshavarz ◽  
Elke Debroye ◽  
Eduard Fron ◽  
Miriam Candelaria Rodríguez González ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Interlayer Space ◽  
High Current Density ◽  
Operational Stability ◽  
Infrared Light ◽  
Two Dimensional ◽  
Commercial Development ◽  
Light Emitting

Abstract Lead halide perovskites have attracted tremendous attention in photovoltaics due to their impressive optoelectronic properties. However, the poor stability of perovskite-based devices remains a bottleneck for further commercial development. Two-dimensional perovskites have great potential in optoelectronic devices, as they are much more stable than their three-dimensional counterparts and rapidly catching up in performance. Herein, we demonstrate high-quality two-dimensional novel perovskite thin films with alternating cations in the interlayer space. This innovative perovskite provides highly stable semiconductor thin films for efficient near-infrared light-emitting diodes (LEDs). Highly efficient LEDs with tunable emission wavelengths from 680 to 770 nm along with excellent operational stability are demonstrated by varying the thickness of the interlayer spacer cation. Furthermore, the best-performing device exhibits an external quantum efficiency of 3.4% at a high current density (J) of 249 mA/cm2 and remains above 2.5% for a J up to 720 mA cm−2, leading to a high radiance of 77.5 W/Sr m2 when driven at 6 V. The same device also shows impressive operational stability, retaining almost 80% of its initial performance after operating at 20 mA/cm2 for 350 min. This work provides fundamental evidence that this novel alternating interlayer cation 2D perovskite can be a promising and stable photonic emitter.

Functionalized magnetite silica thin films fabricated by MAPLE with antibiofilm properties

2012 ◽  
Vol 5 (1) ◽  
pp. 015007 ◽  
Author(s):  
D E Mihaiescu ◽  
R Cristescu ◽  
G Dorcioman ◽  
C E Popescu ◽  
C Nita ◽  
...  
Keyword(s):  
Thin Films ◽  
Silica Thin Films
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