scholarly journals Measurement of full polarization states with hybrid holography based on geometric phase

2019 ◽  
Vol 27 (6) ◽  
pp. 7968 ◽  
Author(s):  
Jiazhen Dou ◽  
Teli Xi ◽  
Chaojie Ma ◽  
Jianglei Di ◽  
Jianlin Zhao
2002 ◽  
Vol 199 ◽  
pp. 514-515
Author(s):  
Rajendra Bhandari

The response of a pair of differently polarized antennas is determined by their polarization states and a phase between them which has a geometric part which becomes discontinuous at singular points in the parameter space. Some consequences are described.


2004 ◽  
Author(s):  
Julio T. Barreiro ◽  
Marie Ericsson ◽  
Nicholas Peters ◽  
Daryl Achilles ◽  
David Branning ◽  
...  

2019 ◽  
Vol 9 (11) ◽  
pp. 2387 ◽  
Author(s):  
Gianluca Ruffato ◽  
Michele Massari ◽  
Pietro Capaldo ◽  
Filippo Romanato

The simultaneous processing of orbital angular momentum (OAM) and polarization has recently acquired particular importance and interest in a wide range of fields ranging from telecommunications to high-dimensional quantum cryptography. Due to their inherently polarization-sensitive optical behavior, Pancharatnam–Berry optical elements (PBOEs), acting on the geometric phase, have proven to be useful for the manipulation of complex light beams with orthogonal polarization states using a single optical element. In this work, different PBOEs have been computed, realized, and optically analyzed for the sorting of beams with orthogonal OAM and polarization states at the telecom wavelength of 1310 nm. The geometric-phase control is obtained by inducing a spatially-dependent form birefringence on a silicon substrate, patterned with properly-oriented subwavelength gratings. The digital grating structure is generated with high-resolution electron beam lithography on a resist mask and transferred to the silicon substrate using inductively coupled plasma-reactive ion etching. The optical characterization of the fabricated samples confirms the expected capability to detect circularly-polarized optical vortices with different handedness and orbital angular momentum.


Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


2021 ◽  
Vol 487 ◽  
pp. 126812
Author(s):  
Mingli Wan ◽  
Pengfei Ji ◽  
Rongrong Wang ◽  
Xiaopeng Zhang ◽  
Mingli Tian ◽  
...  

2012 ◽  
Vol 10 (01) ◽  
pp. 1250007 ◽  
Author(s):  
NOUR ZIDAN ◽  
S. ABDEL-KHALEK ◽  
M. ABDEL-ATY

In this paper, we investigate the geometric phase of the field interacting with a moving four-level atom in the presence of Kerr medium. The results show that the atomic motion, the field-mode structure and Kerr medium play important roles in the evolution of the system dynamics. As illustration, we examine the behavior of the geometric phase and entanglement with experimentally accessible parameters. Some new aspects are observed and discussed.


2021 ◽  
Vol 533 (2) ◽  
pp. 2000494
Author(s):  
Xiaoyan Tang ◽  
Chenxia Li ◽  
Haiyong Gan ◽  
Yingwei He ◽  
Xufeng Jing ◽  
...  

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