scholarly journals Low-threshold ultraviolet stimulated emissions from large-sized single crystalline ZnO transferable membranes

2018 ◽  
Vol 26 (24) ◽  
pp. 31965 ◽  
Author(s):  
Yanfang Zhang ◽  
Feifei Qin ◽  
Jie Zhu ◽  
Xuanhu Chen ◽  
Jing Li ◽  
...  
RSC Advances ◽  
2019 ◽  
Vol 9 (62) ◽  
pp. 35984-35989 ◽  
Author(s):  
Cheng Tian ◽  
Tong guo Tong guo ◽  
Shiqi Zhao ◽  
Wenhao Zhai ◽  
Chaoyang Ge ◽  
...  

Organic–inorganic halide perovskites have achieved remarkable success in various optoelectronic devices.


Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18269-18277
Author(s):  
Pradip Kumar Roy ◽  
Rajesh Kumar Ulaganathan ◽  
Chinnambedu Murugesan Raghavan ◽  
Swapnil Milind Mhatre ◽  
Hung-I Lin ◽  
...  

Low threshold random lasing was observed in a millimeter-sized 2D single-crystalline perovskite microrod. The lower value of the threshold can be attributed to the strong light confinement, long mean free path and large exciton binding energy.


Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1680
Author(s):  
Aanchal Agarwal ◽  
Wei-Yang Tien ◽  
Yu-Sheng Huang ◽  
Ragini Mishra ◽  
Chang-Wei Cheng ◽  
...  

ZnO nanowire-based surface plasmon polariton (SPP) nanolasers with metal–insulator–semiconductor hierarchical nanostructures have emerged as potential candidates for integrated photonic applications. In the present study, we demonstrated an SPP nanolaser consisting of ZnO nanowires coupled with a single-crystalline aluminum (Al) film and a WO3 dielectric interlayer. High-quality ZnO nanowires were prepared using a vapor phase transport and condensation deposition process via catalyzed growth. Subsequently, prepared ZnO nanowires were transferred onto a single-crystalline Al film grown by molecular beam epitaxy (MBE). Meanwhile, a WO3 dielectric interlayer was deposited between the ZnO nanowires and Al film, via e-beam technique, to prevent the optical loss from dominating the metallic region. The metal–oxide–semiconductor (MOS) structured SPP laser, with an optimal WO3 insulating layer thickness of 3.6 nm, demonstrated an ultra-low threshold laser operation (lasing threshold of 0.79 MW cm−2). This threshold value was nearly eight times lower than that previously reported in similar ZnO/Al2O3/Al plasmonic lasers, which were ≈2.4 and ≈3 times suppressed compared to the SPP laser, with WO3 insulating layer thicknesses of 5 nm and 8 nm, respectively. Such suppression of the lasing threshold is attributed to the WO3 insulating layer, which mediated the strong confinement of the optical field in the subwavelength regime.


ACS Photonics ◽  
2017 ◽  
Vol 4 (6) ◽  
pp. 1431-1439 ◽  
Author(s):  
Chien-Ju Lee ◽  
Han Yeh ◽  
Fei Cheng ◽  
Ping-Hsiang Su ◽  
Tsing-Hua Her ◽  
...  

2018 ◽  
Vol 112 (23) ◽  
pp. 231904 ◽  
Author(s):  
Shuanglong Liu ◽  
Bowen Sheng ◽  
Xinqiang Wang ◽  
Dashan Dong ◽  
Ping Wang ◽  
...  

2019 ◽  
Vol 10 (3) ◽  
pp. 679-684 ◽  
Author(s):  
Guo-Qing Wei ◽  
Yi-Chen Tao ◽  
Jun-Jie Wu ◽  
Zhi-Zhou Li ◽  
Ming-Peng Zhuo ◽  
...  

Author(s):  
Joseph D. C. Peng

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.


2014 ◽  
Author(s):  
Chris H. J. Hartgerink
Keyword(s):  

Planta Medica ◽  
2011 ◽  
Vol 77 (12) ◽  
Author(s):  
S Mittler ◽  
MH Müller ◽  
MS Kasparek ◽  
O Kelber ◽  
D Weiser ◽  
...  
Keyword(s):  

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