scholarly journals Infrared photocurrent management in monolithic perovskite/silicon heterojunction tandem solar cells by using a nanocrystalline silicon oxide interlayer

2018 ◽  
Vol 26 (10) ◽  
pp. A487 ◽  
Author(s):  
Luana Mazzarella ◽  
Matteo Werth ◽  
Klaus Jäger ◽  
Marko Jošt ◽  
Lars Korte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Tandem Solar Cells

scholarly journals Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiOx Tunnel Junction

Energies ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 7684
Author(s):  
Lucia V. Mercaldo ◽  
Eugenia Bobeico ◽  
Antonella De Maria ◽  
Marco Della Noce ◽  
Manuela Ferrara ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tunnel Junction ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Low Cost ◽  
Nanocrystalline Silicon ◽  
Transport Layer ◽  
Infrared Light ◽  
Tandem Solar Cells ◽  
Light Management

Perovskite/silicon tandem solar cells have strong potential for high efficiency and low cost photovoltaics. In monolithic (two-terminal) configurations, one key element is the interconnection region of the two subcells, which should be designed for optimal light management and prevention of parasitic p/n junctions. We investigated monolithic perovskite/silicon-heterojunction (SHJ) tandem solar cells with a p/n nanocrystalline silicon/silicon-oxide recombination junction for improved infrared light management. This design can additionally provide for resilience to shunts and simplified cell processing. We probed modified SHJ solar cells, made from double-side polished n-type Si wafers, which included the proposed front-side p/n tunnel junction with the p-type film simultaneously functioning as selective charge transport layer for the SHJ bottom cell, trying different thicknesses for the n-type layer. Full tandem devices were then tested, by applying a planar n-i-p mixed-cation mixed-halide perovskite top cell, fabricated via low temperature solution methods to be compatible with the processed Si wafer. We demonstrate the feasibility of this tandem cell configuration over a 1 cm2 area with negligible J-V hysteresis and a VOC ~1.8 V, matching the sum of the VOC-s contributed by the two components.

scholarly journals Infrared Light Management Using a Nanocrystalline Silicon Oxide Interlayer in Monolithic Perovskite/Silicon Heterojunction Tandem Solar Cells with Efficiency above 25%

2019 ◽  
Vol 9 (14) ◽  
pp. 1803241 ◽  
Author(s):  
Luana Mazzarella ◽  
Yen‐Hung Lin ◽  
Simon Kirner ◽  
Anna B. Morales‐Vilches ◽  
Lars Korte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Infrared Light ◽  
Tandem Solar Cells ◽  
Light Management

scholarly journals Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 759
Author(s):  
Luana Mazzarella ◽  
Anna Morales-Vilches ◽  
Lars Korte ◽  
Rutger Schlatmann ◽  
Bernd Stannowski
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Two Phase ◽  
Nanocrystalline Silicon Films

Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. Finally, we prove that nc-SiOx:H demonstrated clear advantages for maximizing the infrared response of c-Si bottom cells in combination with perovskite top cells.

scholarly journals Mixed phase silicon oxide layers for thin-film silicon solar cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Peter Cuony ◽  
Duncan T.L. Alexander ◽  
Linus Löfgren ◽  
Michael Krumrey ◽  
Michael Marending ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Microstructural Properties ◽  
Microcrystalline Silicon ◽  
Thin Film Silicon ◽  
Transmission Electron ◽  
Doped Silicon

ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.

Development of a-SiOx:H/a-Si1-xGex:H Tandem Solar Cell for Triple-Junction Solar Cell Applications

2012 ◽  
Vol 1426 ◽  
pp. 125-130
Author(s):  
Y.W. Tseng ◽  
Y.H. Lin ◽  
H.J. Hsu ◽  
C.H. Hsu ◽  
C.C. Tsai
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Oxide ◽  
Defect Density ◽  
Tandem Solar Cell ◽  
Tandem Solar Cells ◽  
Single Junction ◽  
Cell Efficiency ◽  
Photo Response ◽  
Hydrogenated Amorphous

ABSTRACTIn this work, the development of hydrogenated amorphous silicon oxide (a-SiOx:H) absorber, a-SiOx:H single-junction solar cells and a-SiOx:H/a-Si1-xGex:H tandem solar cells were presented. The oxygen content of the a-SiOx:H materials controlled by changing CO2-to-SiH4 flow ratio had significant influence on its opto-electrical property. As CO2/SiH4 increased from 0 to 2, the bandgap increased from 1.75 to 2.13 eV while the photo-conductivity decreased from 8.25×10-6 to 1.02×10-8 S/cm. Photo-response of over 105 can be obtained as the bandgap was approximately 1.90 eV. The performance of single-junction solar cells revealed a better efficiency can be obtained as the absorber bandgap was in the range of 1.83 to 1.90 eV. Further increase of the absorber bandgap may lead to the increase in bulk defect density which deteriorated the cell efficiency. Finally, a-SiOx:H/a-Si1-xGex:H tandem solar cell was fabricated with the absorber bandgap of 1.90 eV in the top cell. By matching the current between the component cells, the tandem cell efficiency of 7.38% has been achieved.

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