scholarly journals Single-photon cesium Rydberg excitation spectroscopy using 3186-nm UV laser and room-temperature vapor cell

2017 ◽  
Vol 25 (19) ◽  
pp. 22510 ◽  
Author(s):  
Jieying Wang ◽  
Jiandong Bai ◽  
Jun He ◽  
Junmin Wang
Keyword(s):  
Room Temperature ◽  
Single Photon ◽  
Uv Laser ◽  
Vapor Cell

Storage of Single-photon level Polarization States in a Vapor Cell at Room-Temperature

2014 ◽  
Author(s):  
Bertus Jordaan ◽  
Connor Kupchak ◽  
Thomas Mittiga ◽  
Mehdi Namazi ◽  
Christian Nölleke ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Photon ◽  
Vapor Cell ◽  
Polarization States

Room temperature integrated single photon sources based on highly photostable perovskites nanocubes coupled to optical nanofibers

2021 ◽  
Author(s):  
Alberto Bramati ◽  
Stefano Pierini ◽  
Marianna D'Amato ◽  
Mayank Goyal ◽  
Quentin C. Glorieux ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Photon ◽  
Photon Sources

Однофотонное излучение одиночной квантовой точки CdTeSe/ZnS в ближнем инфракрасном диапазоне при комнатной температуре

2021 ◽  
Vol 47 (21) ◽  
pp. 3
Author(s):  
Siyue Jin ◽  
Xingsheng Xu
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Auger Recombination ◽  
Single Photon ◽  
Irradiation Time ◽  
Colloidal Quantum Dots ◽  
Single Quantum ◽  
Illumination Time ◽  
Single Quantum Dots ◽  
Single Quantum Dot

In this study, the photostability of a CdTeSe/ZnS colloidal single photon emitter with a wavelength of 800nm at room temperature was investigated. The second-order correlation function was much smaller than 0.1, which proved that the CdTeSe/ZnS single quantum dot at 800nm is a highly pure single-photon emitter. The effects of the irradiation time on the optical properties from single quantum dots were analyzed. As the illumination time increased, the emission of biexciton and multiexciton in the colloidal quantum dots increased, and the occurrence of Auger recombination increased.

On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

2001 ◽  
Vol 172 (3-4) ◽  
pp. 200-206 ◽  
Author(s):  
Mikael Lindstam ◽  
Mats Boman ◽  
Klaus Piglmayer
Keyword(s):  
Growth Mechanism ◽  
Room Temperature ◽  
Uv Laser

Room-temperature single-photon generation from solitary dopants of carbon nanotubes

2015 ◽  
Vol 10 (8) ◽  
pp. 671-675 ◽  
Author(s):  
Xuedan Ma ◽  
Nicolai F. Hartmann ◽  
Jon K. S. Baldwin ◽  
Stephen K. Doorn ◽  
Han Htoon
Keyword(s):  
Carbon Nanotubes ◽  
Room Temperature ◽  
Single Photon ◽  
Photon Generation

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Metal Oxide Semiconductor ◽  
Nitrogen Vacancy ◽  
Oxide Semiconductor ◽  
Nitrogen Vacancy Center ◽  
Photon Sources ◽  
Vacancy Center

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.

scholarly journals Bright room temperature single photon source at telecom range in cubic silicon carbide

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Ziyu Wang ◽  
Abdullah Rasmita ◽  
Jianqun Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Single Photon ◽  
Single Photon Source ◽  
Cubic Silicon Carbide ◽  
Photon Source
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