scholarly journals Low-loss, compact, and fabrication-tolerant Si-wire 90° waveguide bend using clothoid and normal curves for large scale photonic integrated circuits

2017 ◽  
Vol 25 (8) ◽  
pp. 9150 ◽  
Author(s):  
Takeshi Fujisawa ◽  
Shuntaro Makino ◽  
Takanori Sato ◽  
Kunimasa Saitoh
Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 910 ◽  
Author(s):  
Rongbo Wu ◽  
Min Wang ◽  
Jian Xu ◽  
Jia Qi ◽  
Wei Chu ◽  
...  

In this paper, we develop a technique for realizing multi-centimeter-long lithium niobate on insulator (LNOI) waveguides with a propagation loss as low as 0.027 dB/cm. Our technique relies on patterning a chromium thin film coated on the top surface of LNOI into a hard mask with a femtosecond laser followed by chemo-mechanical polishing for structuring the LNOI into the waveguides. The surface roughness on the waveguides was determined with an atomic force microscope to be 0.452 nm. The approach is compatible with other surface patterning technologies, such as optical and electron beam lithographies or laser direct writing, enabling high-throughput manufacturing of large-scale LNOI-based photonic integrated circuits.


2021 ◽  
Author(s):  
Hongyan Yu ◽  
Xinyu Sun ◽  
Dasai Ban ◽  
Feng Qiu

Abstract Transmission of the fundamental mode in multi-mode waveguides is an effective scheme for a silicon-based platform to reduce scattering loss. However, the application of the scheme is usually limited to straight waveguides and restricted in multi-mode bending waveguides. This is because the fundamental mode of a straight waveguide is seriously disordered after passing the bend. In this work, we have presented a “matched bending radius” approach, by which an ultra-low loss and negligible modal disorder have been demonstrated in the Si and Si3N4 multi-mode waveguides. The estimated optical field overlap factor is almost 0 dB at the matched bending radius, indicating that the fundamental mode can be re-generated after passing the multi-mode bending waveguide. The proposed approach will contribute to applying the low loss scheme in large-scale photonic integrated circuits.


Author(s):  
Rongbo Wu ◽  
Min Wang ◽  
Jian Xu ◽  
Jia Qi ◽  
Wei Chu ◽  
...  

We develop a technique for realizing lithium niobate on insulator (LNOI) waveguides of a multi-centimeter-length with a propagation loss as low as 0.027 dB/cm. Our technique relies on patterning a chromium (Cr) thin film coated on the top surface of LNOI into a hard mask with a femtosecond laser followed by the chemo-mechanical polishing for structuring the LNOI into the waveguides. The surface roughness on the waveguides is determined to be 0.452 nm with an atomic force microscope (AFM). The approach is compatible with other surface patterning technologies such as optical and electron beam lithographies or laser direct writing, enabling high-throughput manufacturing of large-scale LNOI-based photonic integrated circuits.


Author(s):  
Kevin Luke ◽  
Prashanta Kharel ◽  
Christian Reimer ◽  
Lingyan He ◽  
Marko Loncar ◽  
...  

2020 ◽  
Vol 10 (13) ◽  
pp. 4507
Author(s):  
Vinh Huu Nguyen ◽  
In Ki Kim ◽  
Tae Joon Seok

A silicon photonic 3-dB power splitter is one of the essential components to demonstrate large-scale silicon photonic integrated circuits (PICs), and can be utilized to implement modulators, 1 × 2 switches, and 1 × N power splitters for various PIC applications. In this paper, we reported the design and experimental demonstration of low-loss and broadband silicon photonic 3-dB power splitters. The power splitter was realized by adiabatically tapered rib waveguides with 60-nm shallow etches. The shallow-etched rib waveguides offered strong coupling and relaxed critical dimensions (a taper tip width of 200 nm and gap spacing of 300 nm). The fabricated device exhibited an excess loss as low as 0.06 dB at a 1550-nm wavelength and a broad operating wavelength range from 1470 nm to 1570 nm. The relaxed critical dimensions (≥200 nm) make the power splitter compatible with standard fabrication processes of existing silicon photonics foundries.


2019 ◽  
Vol 52 (21) ◽  
pp. 214001 ◽  
Author(s):  
P K J Singaravelu ◽  
G C R Devarapu ◽  
Sebastian A Schulz ◽  
Quentin Wilmart ◽  
Stéphane Malhouitre ◽  
...  

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