scholarly journals Highly efficient tunable and localized on-chip electrical plasmon source using protruded metal-insulator-metal structure

2016 ◽  
Vol 24 (10) ◽  
pp. 10663 ◽  
Author(s):  
Wee Kee Phua ◽  
Yuriy Akimov ◽  
Lin Wu ◽  
Hong Son Chu ◽  
Ping Bai ◽  
...  
Keyword(s):  
Metal Structure ◽  
Metal Insulator ◽  
Highly Efficient ◽  
Metal Insulator Metal ◽  
On Chip

scholarly journals A Highly Efficient On-chip 3D Plasmonic Nanofocusing Structure

2013 ◽  
Vol 1566 ◽  
Author(s):  
Myung-Ki Kim ◽  
Hyuck Choo
Keyword(s):  
Design Analysis ◽  
Metal Insulator ◽  
Highly Efficient ◽  
Theoretical Design ◽  
Metal Insulator Metal ◽  
Plasmonic Nanofocusing ◽  
On Chip ◽  
Detailed Picture

ABSTRACTWe demonstrate and analyze a highly efficient on-chip 3D metal-insulator-metal (MIM) nanofocusing structure. Here, we show the in-depth theoretical design, analysis and discussion to provide a detailed picture of the highly efficient, on-chip nanofocusing process which is linearly tapered in 3D.

Highly Efficient and Tailorable On-Chip Metal–Insulator–Metal Plasmonic Nanofocusing Cavity

ACS Photonics ◽  
2014 ◽  
Vol 1 (10) ◽  
pp. 944-953 ◽  
Author(s):  
Zheng Li ◽  
Jun-long Kou ◽  
Myungki Kim ◽  
Jeong Oen Lee ◽  
Hyuck Choo
Keyword(s):  
Metal Insulator ◽  
Highly Efficient ◽  
Metal Insulator Metal ◽  
Plasmonic Nanofocusing ◽  
On Chip

Transmission characteristics and applications of plasmonic slit waveguide based on metal-insulator-metal structure

2012 ◽  
Vol 51 (10) ◽  
pp. 104601-1 ◽  
Author(s):  
Kunhua Wen ◽  
Lianshan Yan ◽  
Wei Pan ◽  
Bin Luo ◽  
Zhen Guo ◽  
...  
Keyword(s):  
Metal Structure ◽  
Transmission Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Metal

Narrow-Band Filter of Surface Plasmon Based on Dual-Section Metal-Insulator-Metal Structure

2013 ◽  
Vol 33 (11) ◽  
pp. 1123003
Author(s):  
罗昕 Luo Xin ◽  
邹喜华 Zou Xihua ◽  
温坤华 Wen Kunhua ◽  
潘炜 Pan Wei ◽  
闫连山 Yan Lianshan ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Narrow Band ◽  
Metal Structure ◽  
Metal Insulator ◽  
Band Filter ◽  
Metal Insulator Metal ◽  
Narrow Band Filter

Greatly enhanced electric field by the improved metal–insulator–metal structure in the visible region

2019 ◽  
Vol 30 (32) ◽  
pp. 32LT01
Author(s):  
Shiwei Shu ◽  
Chengping Huang ◽  
Meng Zhang ◽  
Yan Yan
Keyword(s):  
Electric Field ◽  
Visible Region ◽  
Metal Structure ◽  
Metal Insulator ◽  
Metal Insulator Metal

Ion Charge Dynamics in Ceria-Based Metal Insulator Metal Structure

2017 ◽  
Vol 121 (42) ◽  
pp. 23406-23412 ◽  
Author(s):  
Vittorio Foglietti ◽  
Nan Yang ◽  
Carmela Aruta ◽  
Pasquale Orgiani ◽  
Fabio Di Pietrantonio ◽  
...  
Keyword(s):  
Metal Structure ◽  
Metal Insulator ◽  
Charge Dynamics ◽  
Metal Insulator Metal

Band-stop filter based on a metal/insulator-disk array/metal structure

2019 ◽  
Vol 33 (20) ◽  
pp. 1950232
Author(s):  
J. L. Duan ◽  
G. Song ◽  
P. L. Lang ◽  
G. Y. Duan ◽  
F. Z. Xie
Keyword(s):  
Stop Band ◽  
Metal Structure ◽  
Metal Insulator ◽  
Disk Array ◽  
Central Wavelength ◽  
Metal Insulator Metal ◽  
Band Stop Filter ◽  
Potential Applications ◽  
Fdtd Methods ◽  
Mim Waveguide

We describe a band-stop filter based on a periodic dielectric-disk array inserted into a metal–insulator–metal (MIM) waveguide. We use finite-difference time-domain (FDTD) methods to study the characteristics of our proposed structure. The results show that there is a flat stop band in the transmission spectrum, in which the transmission is close to zero. The central wavelength of the filter can be controlled by adjusting the lattice constant of the disk array. We discuss the maximum bandwidth and provide a set of parameters suitable for designing a band-stop filter that has a flat stop band-width of approximately 400 nm and a superior on/off ratio. Our structure has potential applications in the design of nanoscale optical devices.

Design of the Technological Flow to Produce a Planar Variant of the Nothing on Insulator Device and its Tunneling Conduction

2019 ◽  
Vol 60 ◽  
pp. 33-41 ◽  
Author(s):  
Cristian Ravariu ◽  
Elena Manea ◽  
Catalin Parvulescu ◽  
Dan Mihaiescu
Keyword(s):  
Conduction Mechanism ◽  
Metal Structure ◽  
Static Characteristics ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Inversion Channel ◽  
Tunneling Conduction ◽  
Metal Insulator Metal ◽  
Dual Gate ◽  
Effect Transistor

This paper starts from the leakage currents through the gates of the last MOSFET generations and propose a related structure, which can be inherently included as parasitic device in any future MOSFET sub-22nm or can be deliberated fabricated to induce its own behavior. This structure is abbreviated in this paper by p-NOI (planar-Nothing On Insulator) and it can be simply produced by the planar Si-technology. Its concept is derived from the NOI (Nothing On Insulator) concept, but replaces the vacuum with oxide. The conduction mechanism is based on a thin oxide tunneling, under the Fowler-Nordheim's law. The current flow occurs from a source to a lateral drain, without an inversion channel and without a lateral pn junction, as in the MOSFET case. A similar investigated device by other authors is a fabricated MIM (Metal-Insulator-Metal) structure, which is compared with the actual p-NOI simulation. Finally, a dual gate p-NOI device is investigated. The depletion-accumulation transition is captured by the static I-V static characteristics. Using two steps of oxide, of 2nm and 10nm, a second planar-NOI structure with three terminals was studied. The (G) terminal is associated to a Gate and the (S) terminal is associated to a Source of a Field Effect Transistor. Some particular applications as diode or transistor are emphasized versus the gate biasing regime.

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