scholarly journals CdS_xSe_1-x/ZnS semiconductor nanocrystal laser with sub 10kW/cm^2 threshold and 40nJ emission output at 600 nm

2015 ◽  
Vol 24 (2) ◽  
pp. A146 ◽  
Author(s):  
L. J. McLellan ◽  
B. Guilhabert ◽  
N. Laurand ◽  
M. D. Dawson
2019 ◽  
Author(s):  
Je-Ruei Wen ◽  
Benjamin Roman ◽  
Freddy Rodriguez Ortiz ◽  
Noel Mireles Villegas ◽  
Nicholas Porcellino ◽  
...  

Lack of detailed understanding of the growth mechanism of CsPbBr3 nanocrystals has hindered sophisticated morphological and chemical control of this important emerging optoelectronic material. Here, we have elucidated the growth mechanism by slowing the reaction kinetics. When 1-bromohexane is used as an alternative halide source, bromide is slowly released into the reaction mixture, extending the reaction time from ~3 seconds to greater than 20 minutes. This enables us to monitor the phase evolution of products over the course of reaction, revealing that CsBr is the initial species formed, followed by Cs4PbBr6, and finally CsPbBr3. Further, formation of monodisperse CsBr nanocrystals is demonstrated in a bromide-deficient and lead-abundant solution. The CsBr can only be transformed into CsPbBr3 nanocubes if additional bromide is added. Our results indicate a fundamentally different growth mechanism for CsPbBr3 in comparison with more established semiconductor nanocrystal systems and reveal the critical role of the chemical availability of bromide for the growth reactions.<br>


2013 ◽  
Vol 58 (7) ◽  
pp. 127-133 ◽  
Author(s):  
Y. Amit ◽  
A. Fasut ◽  
O. Milo ◽  
E. Rabani ◽  
A. Frenkel ◽  
...  

2004 ◽  
Vol 830 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand

ABSTRACTCurrent research directions and recent advances in the area of semiconductor nanocrystal floating-gate memory devices are herein reviewed. Particular attention is placed on the advantages, limitations and perspectives of some of the principal new alternatives suggested for improving device performance and reliability. The attractive option of generating Si nanocrystal memories by ion-beam-synthesis (IBS) is discussed with emphasis on the ultra-low-energy (ULE) regime. Pertinent issues related to the fabrication of low-voltage memory cells and the integration of the ULE-IBS technique in manufactory environment are discussed. The effect on device performance of parasitic transistors that form at the channel corner of shallow trench isolated transistors is described in details. It is shown that such parasitic transistors lead to a substantial degradation of the electrical properties of the intended devices and dominates the memory behavior of deep submicronic cells.


ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 7060-7066 ◽  
Author(s):  
Zheng Hua ◽  
Qinfeng Xu ◽  
Xiangnan Huang ◽  
Chunfeng Zhang ◽  
Xiaoyong Wang ◽  
...  

Langmuir ◽  
2010 ◽  
Vol 26 (23) ◽  
pp. 17981-17988 ◽  
Author(s):  
Ting Ren ◽  
Wolfgang Erker ◽  
Thomas Basché ◽  
Wolfgang Schärtl

2014 ◽  
Vol 118 (5) ◽  
pp. 2867-2876 ◽  
Author(s):  
Anvar S. Baimuratov ◽  
Ivan D. Rukhlenko ◽  
Vadim K. Turkov ◽  
Mikhail Yu. Leonov ◽  
Alexander V. Baranov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document