scholarly journals Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits

2015 ◽  
Vol 23 (16) ◽  
pp. 21334 ◽  
Author(s):  
Kuanping Shang ◽  
Shibnath Pathak ◽  
Binbin Guan ◽  
Guangyao Liu ◽  
S. J. B. Yoo
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Low Loss

scholarly journals Wafer-scale low-loss lithium niobate photonic integrated circuits

2020 ◽  
Author(s):  
Kevin Luke ◽  
Prashanta Kharel ◽  
Christian Reimer ◽  
Lingyan He ◽  
Marko Loncar ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Low Loss ◽  
Wafer Scale

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits

2020 ◽  
Author(s):  
Jeroen Goyvaerts ◽  
Sulakshna Kumari ◽  
Sarah Uvin ◽  
Jing Zhang ◽  
Roel Baets ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits

scholarly journals Long Low-Loss-Litium Niobate on Insulator Waveguides with Sub-Nanometer Surface Roughness

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 910 ◽  
Author(s):  
Rongbo Wu ◽  
Min Wang ◽  
Jian Xu ◽  
Jia Qi ◽  
Wei Chu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Integrated Circuits ◽  
Surface Patterning ◽  
Propagation Loss ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Low Loss ◽  
Atomic Force

In this paper, we develop a technique for realizing multi-centimeter-long lithium niobate on insulator (LNOI) waveguides with a propagation loss as low as 0.027 dB/cm. Our technique relies on patterning a chromium thin film coated on the top surface of LNOI into a hard mask with a femtosecond laser followed by chemo-mechanical polishing for structuring the LNOI into the waveguides. The surface roughness on the waveguides was determined with an atomic force microscope to be 0.452 nm. The approach is compatible with other surface patterning technologies, such as optical and electron beam lithographies or laser direct writing, enabling high-throughput manufacturing of large-scale LNOI-based photonic integrated circuits.

scholarly journals Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform

2019 ◽  
Vol 220 ◽  
pp. 03012
Author(s):  
Ilia Elmanov ◽  
Anna Elmanova ◽  
Sophia Komrakova ◽  
Alexander Golikov ◽  
Natalya Kaurova ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Etching Rate ◽  
High Ratio ◽  
Practical Application ◽  
Non Destructive

In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.

scholarly journals Low-loss, compact, spot-size-converter based vertical couplers for photonic integrated circuits

2019 ◽  
Vol 52 (21) ◽  
pp. 214001 ◽  
Author(s):  
P K J Singaravelu ◽  
G C R Devarapu ◽  
Sebastian A Schulz ◽  
Quentin Wilmart ◽  
Stéphane Malhouitre ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Spot Size ◽  
Low Loss

Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides for guided-wave photonic integrated circuits

1994 ◽  
Vol 6 (11) ◽  
pp. 1347-1349 ◽  
Author(s):  
J.F. Vinchant ◽  
P. Pagnod-Rossiaux ◽  
J. Le Bris ◽  
A. Goutelle ◽  
H. Bissessur ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Guided Wave ◽  
Low Loss
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