scholarly journals Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption

2014 ◽  
Vol 22 (19) ◽  
pp. 23086 ◽  
Author(s):  
X. D. Li ◽  
T. P. Chen ◽  
Y. Liu ◽  
K. C. Leong
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Thermal Annealing ◽  
Dielectric Function ◽  
Free Electron ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Electron Absorption ◽  
Doped Zno

Rapid Thermal Annealing Effect of Al-Doped ZnO Thin Films

2005 ◽  
Vol 47 (92) ◽  
pp. 296 ◽  
Author(s):  
Lee Won-Jae ◽  
Cho Chae-Ryong ◽  
Cho Kyung-Mok ◽  
Jeong Se-Young
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Doped Zno

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Improved Electrical Conduction Properties in Unintentionally-doped ZnO Thin Films Treated by Rapid Thermal Annealing

2011 ◽  
Vol 59 (4) ◽  
pp. 2774-2777 ◽  
Author(s):  
Youngmin Lee ◽  
Choeun Lee ◽  
Eunhee Shim ◽  
Eiwhan Jung ◽  
Jinyong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Conduction ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Conduction Properties

STRUCTURAL AND OPTICAL PROPERTIES OF UNDOPED AND SILVER, LITHIUM AND COBALT-DOPED ZnO THIN FILMS

2019 ◽  
Vol 27 (04) ◽  
pp. 1950138
Author(s):  
FATMA MEYDANERİ TEZEL ◽  
İ. AFŞIN KARİPER
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Refraction Index ◽  
Zno Thin Films ◽  
High Temperature Furnace ◽  
Doped Zno ◽  
Ray Patterns ◽  
Temperature Furnace

Undoped and silver, lithium and cobalt-doped ZnO thin films have been successfully deposited on glass by chemical bath deposition (CBD). The reaction temperature was 50∘C and the films were annealed at 400∘C for 4[Formula: see text]h in a high temperature furnace. UV/VIS spectrum was used to determine optical transmittance, optical band gap ([Formula: see text] and absorbance values of Ag:ZnO, Co:ZnO, Li:ZnO and undoped ZnO thin films. Optical band gap ([Formula: see text] and absorbance values of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were found as 0.0158, 0.0064, 0.2638, 0.0956 and 3.24, 3.13, 3.27, 2.96 eV, respectively. Extinction coefficients and refraction indexes of the films were found to be 0.0096, 0.0038, 0.0068, 0.019 (extinction coefficient) and 1.26, 1.14, 1.66, 2.33 (refraction index), respectively. X-ray patterns of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were confirmed as amorphous.

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