scholarly journals Super-resolution imaging of lateral distribution for the blue-light emission of an InGaN single-quantum-well structure utilizing the stimulated emission depletion effect

2014 ◽  
Vol 22 (19) ◽  
pp. 22575
Author(s):  
Yuichi Kozawa ◽  
Yuta Kusama ◽  
Shunichi Sato ◽  
Hiroyuki Yokoyama
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
Light Emission ◽  
Super Resolution ◽  
Stimulated Emission ◽  
Single Quantum ◽  
Blue Light Emission ◽  
Single Quantum Well ◽  
Depletion Effect ◽  
Resolution Imaging

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Low Efficiency

Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures

1998 ◽  
Vol 23 (6) ◽  
pp. 1189-1195 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Quantum Well ◽  
Stimulated Emission ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Localized Excitons

Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (10) ◽  
pp. 102103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Tao Gilbert ◽  
Nathan Pfaff ◽  
Shinichi Tanaka ◽  
Yuji Zhao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Quantum Well Structure ◽  
Thermal Droop

Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures

1998 ◽  
Vol 189-190 ◽  
pp. 803-807 ◽  
Author(s):  
Marek Osiński ◽  
Piotr Perlin ◽  
Petr G. Eliseev ◽  
Jinhyun Lee ◽  
Vladimir A. Smagley
Keyword(s):  
Quantum Well ◽  
Light Emission ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Comprehensive Studies

scholarly journals Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1499
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang ◽  
Nadeem Nasir ◽  
Haris Mehmood ◽  
...  
Keyword(s):  
Quantum Well ◽  
Power Efficiency ◽  
Semiconductor Device ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Design Parameters ◽  
Diffusion Welding ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting

In the last decade, Silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.

Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure

2002 ◽  
Vol 46 (8) ◽  
pp. 1123-1126 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Indium Content ◽  
Stimulated Emission ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Annealing Effects ◽  
High Indium Content
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