scholarly journals Highly precise and accurate terahertz polarization measurements based on electro-optic sampling with polarization modulation of probe pulses

2014 ◽  
Vol 22 (15) ◽  
pp. 17915 ◽  
Author(s):  
Natsuki Nemoto ◽  
Takuya Higuchi ◽  
Natsuki Kanda ◽  
Kuniaki Konishi ◽  
Makoto Kuwata-Gonokami
Keyword(s):  
Polarization Modulation ◽  
Polarization Measurements ◽  
Electro Optic

scholarly journals Effects of polarization modulation induced by electro-optic modulators in fiber-based setups

2022 ◽  
pp. 1-1
Author(s):  
Frederic Du-Burck ◽  
Karim Manamanni ◽  
Tatiana Steshchenko ◽  
Amine Chaouche Ramdane ◽  
Vincent Roncin
Keyword(s):  
Polarization Modulation ◽  
Electro Optic

Electro optic Tm:YAP/KLTN laser using polarization modulation

2022 ◽  
Vol 146 ◽  
pp. 107548
Author(s):  
Rotem Nahear ◽  
Yechiel Bach ◽  
Salman Noach
Keyword(s):  
Polarization Modulation ◽  
Electro Optic

Electro optic active Q switched Tm:YLF laser based on polarization modulation

2021 ◽  
Author(s):  
Salman Noach ◽  
rotem nahear ◽  
Yehuda Vidal ◽  
Yehudit Garcia ◽  
Aharon Agranat
Keyword(s):  
Polarization Modulation ◽  
Electro Optic ◽  
Tm:Ylf Laser

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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