scholarly journals Annealing of SnO_2 thin films by ultra-short laser pulses

2014 ◽  
Vol 22 (S3) ◽  
pp. A607 ◽  
Author(s):  
D. Scorticati ◽  
A. Illiberi ◽  
T. Bor ◽  
S.W.H. Eijt ◽  
H. Schut ◽  
...  
2020 ◽  
Vol 27 ◽  
pp. 57-61
Author(s):  
Radim Kudělka ◽  
Lukáš Václavek ◽  
Jan Tomáštík ◽  
Sabina Malecová ◽  
Radim Čtvrtlík

Knowledge of mechanical properties of thin films is essential for most of their applications. However, their determination can be problematic for very thin films. LAW (Laser-induced acoustic waves) is a combined acousto-optic method capable of measuring films with thickness from few nanometers. It utilizes ultrasound surface waves which are excited via short laser pulses and detected by a PVDF foil. Properties such as Young’s modulus, Poisson’s ratio and density of both the film and the substrate as well as film thickness can be explored.Results from the LAW method are successfully compared with nanoindentation for Young’s modulus evaluation and with optical method for film thickness evaluation and also with literature data. Application of LAW for anisotropy mapping of materials with cubic crystallographic lattice is also demonstrated.


1994 ◽  
Vol 7 (4) ◽  
pp. 751-755 ◽  
Author(s):  
Gregory N. Gol'tsman ◽  
Ivan G. Goghidze ◽  
Pavel B. Kouminov ◽  
Boris S. Karasik ◽  
Alexei D. Semenov ◽  
...  

2012 ◽  
Vol 1404 ◽  
Author(s):  
Anja Hanisch-Blicharski ◽  
Simone Wall ◽  
Annika Kalus ◽  
Tim Frigge ◽  
Michael Horn- von Hoegen

ABSTRACTThe cooling process of ultrathin hetero films upon excitation with short laser pulses was studied for epitaxial Bi(111) films on Si(001) and Si(111) substrates by means of the Debye-Waller effect with ultrafast electron diffraction. From the exponential decay of the temperature, a cooling time constant was determined as a function of thickness for both substrates. For Bi/Si(111), a linear dependence between the decay constant and thickness was observed, even for 2.8 nm thin films , as predicted from the diffuse mismatch model (DMM) and the acoustic mismatch model (AMM). However, with Bi/Si(001), a significant deviation from this linear dependence was observed for film thicknesses below 5 nm.


2015 ◽  
Vol 98 ◽  
pp. 327-335 ◽  
Author(s):  
D. Scorticati ◽  
A. Illiberi ◽  
T.C. Bor ◽  
S.W.H. Eijt ◽  
H. Schut ◽  
...  

2012 ◽  
Vol 45 (31) ◽  
pp. 315303 ◽  
Author(s):  
Gerhard Heise ◽  
Matthias Domke ◽  
Jan Konrad ◽  
Sebastian Sarrach ◽  
Jürgen Sotrop ◽  
...  

2003 ◽  
Vol 780 ◽  
Author(s):  
Eric Millon ◽  
Jacques Perrière ◽  
Olivier Albert ◽  
Jean Etchepare ◽  
Chantal Boulmer-Leborgne

AbstractThe femtosecond (fs) lasers display noticeable specificities compared with the nanosecond (ns) ones operating in the UV domain, and classically used for the pulsed-laser deposition (PLD) technique. The ultra-short laser pulses offer the feature of minimal thermal damage induced in the target material, and the very high intensities (1012-14 W/cm2) available with fs lasers are likely to allow the ablation of any kind of materials, even the wide band gap insulators.The morphology, structure, composition and properties of the films obtained by fs PLD are studied according to the experimental growth conditions, the nature of the target material, and the dynamic expansion of plasma plume. In the case of ZnO, smooth, dense and nanocrystalline films (10 to 30 nm crystallites) can be epitaxially grown on adequate substrates (i.e. sapphire). On the contrary, BaTiO3 films are formed by the random stacking of aggregates (10 to 200 nm) leading to a non negligible surface roughness,. In addition, the chemical composition of fs PLD thin films of multicomponent compound (i.e. BaTiO3) is not homogeneous, an enrichment in the lighter element being observed in the central part of the film. These properties are related to the phenomena taking place during the various steps of the process (laser-matter interaction, plasma formation, expansion) through time resolved emission spectroscopy and plume optical imaging measurements.


2013 ◽  
Vol 114 (1) ◽  
pp. 231-241 ◽  
Author(s):  
P. Gečys ◽  
E. Markauskas ◽  
J. Dudutis ◽  
G. Račiukaitis

2000 ◽  
Vol 30 (1-4) ◽  
pp. 129-138 ◽  
Author(s):  
O. Baldus ◽  
W. Krasser ◽  
S. Hoffmann ◽  
R. Waser ◽  
E. W. Kreutz

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