scholarly journals Electro-optic light modulation and THz generation in locally plasma-activated silicon nanophotonic devices

2014 ◽  
Vol 22 (5) ◽  
pp. 5252 ◽  
Author(s):  
Christopher Matheisen ◽  
Michael Waldow ◽  
Bartos Chmielak ◽  
Simon Sawallich ◽  
Thorsten Wahlbrink ◽  
...  
Keyword(s):  
Light Modulation ◽  
Thz Generation ◽  
Nanophotonic Devices ◽  
Electro Optic

scholarly journals Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

2015 ◽  
Vol 7 (24) ◽  
pp. 13350-13359 ◽  
Author(s):  
J. P. George ◽  
P. F. Smet ◽  
J. Botterman ◽  
V. Bliznuk ◽  
W. Woestenborghs ◽  
...  
Keyword(s):  
Thin Films ◽  
Pzt Thin Films ◽  
Nanophotonic Devices ◽  
Electro Optic

scholarly journals Electro-Optic Intensity Modulation in Fe-Doped KTa0.65Nb0.35O3 Crystals

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 870
Author(s):  
Cheng-Kai Yang ◽  
Xu-Ping Wang ◽  
Fei Zhang ◽  
Hua-Di Zhang ◽  
Bing Liu ◽  
...  
Keyword(s):  
Modulation Depth ◽  
Incident Light ◽  
Light Modulation ◽  
Light Power ◽  
Half Wave Voltage ◽  
Half Wave ◽  
Electro Optic ◽  
Ion Doping ◽  
Growth Method ◽  
Top Seeded Solution Growth

KTa0.65Nb0.35O3 and Fe-doped KTa0.65Nb0.35O3 crystals were grown by the top-seeded solution growth method (TSSG). Fe ion doping significantly improves the electro-optic properties of cubic KTN crystals. We describe their electro-optic modulation theory and experimental research. The electro-optic modulation waveform deduced by theoretical calculation is basically consistent with the waveform measured in the experiment. We observed the attenuation of light modulation under multiple voltage cycles. The modulation curve of the crystal is inconsistent when the crystal voltage is boosting and bucking. Under the same voltage condition, the higher the incident light power, the faster the modulation depth attenuation. In this experiment, the size of the KTN crystal chip is 6 mm × 5 mm × 2 mm. We obtain the effective electro-optic coefficient as s11 − s12 = 1.34 × 10−15 m2/V2; the half-wave voltage near the Curie temperature is 39 V.

scholarly journals Acousto‐electro‐optic light modulation

1985 ◽  
Vol 46 (3) ◽  
pp. 215-217 ◽  
Author(s):  
Demetri Psaltis ◽  
Hyuk Lee ◽  
Gabriel Sirat
Keyword(s):  
Light Modulation ◽  
Electro Optic

Light modulation and waveguide probing via acousto-optic, electro-optic, and thermo-optic interactions

1994 ◽  
Author(s):  
Daumantas Ciplys ◽  
Romualdas Rimeika ◽  
Juozas Paskauskas
Keyword(s):  
Light Modulation ◽  
Electro Optic

scholarly journals Resonance enhanced THz generation in electro-optic polymers near the absorption maximum

2004 ◽  
Vol 85 (24) ◽  
pp. 5827-5829 ◽  
Author(s):  
Alexander M. Sinyukov ◽  
Megan R. Leahy ◽  
L. Michael Hayden ◽  
Marnie Haller ◽  
Jingdong Luo ◽  
...  
Keyword(s):  
Absorption Maximum ◽  
Thz Generation ◽  
Electro Optic

Glass electro-optic polymer structure for light modulation and switching

1998 ◽  
Author(s):  
Alain Morand ◽  
Anh Ho-Quoc ◽  
Ted J. Smail ◽  
Pierre Benech ◽  
Dominique Bosc ◽  
...  
Keyword(s):  
Polymer Structure ◽  
Light Modulation ◽  
Electro Optic

High-speed light modulation using complex refractive-index changes of electro-optic polymers

2000 ◽  
Vol 77 (23) ◽  
pp. 3683-3685 ◽  
Author(s):  
Kenji Harada ◽  
Katsuhiro Munakata ◽  
Masahide Itoh ◽  
Toyohiko Yatagai ◽  
Yutaka Honda ◽  
...  
Keyword(s):  
Refractive Index ◽  
High Speed ◽  
Complex Refractive Index ◽  
Light Modulation ◽  
Electro Optic ◽  
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