scholarly journals Integrated CARS source based on seeded four-wave mixing in silicon nitride

2013 ◽  
Vol 21 (26) ◽  
pp. 32123 ◽  
Author(s):  
Jörn P. Epping ◽  
Michael Kues ◽  
Peter J.M. van der Slot ◽  
Chris J. Lee ◽  
Carsten Fallnich ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Four Wave Mixing ◽  
Wave Mixing

Four Wave Mixing in Tellurium-Oxide-Coated Silicon Nitride Ring Resonator

2020 ◽  
Author(s):  
Khadijeh Miarabbas Kiani ◽  
Hamidu Mbonde ◽  
Henry Fanki ◽  
Richard Mateman ◽  
Arne Leinse ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ring Resonator ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Tellurium Oxide

Ultra-Broadband Bragg Scattering Four Wave Mixing in Silicon Rich Silicon Nitride Waveguides

2019 ◽  
Author(s):  
C. Lacava ◽  
T. Dominguez Bucio ◽  
A.Z. Khokhar ◽  
P. Horak ◽  
Y. Jung ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Bragg Scattering

scholarly journals Enhancing the Kerr nonlinearity in SiN nanowires with graphene oxide films

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Conversion Efficiency ◽  
Oxide Films ◽  
Kerr Nonlinearity ◽  
Four Wave Mixing ◽  
High Conversion ◽  
Wave Mixing ◽  
Efficiency Improvement ◽  
High Conversion Efficiency

Enhanced four-wave mixing in silicon nitride waveguides integrated with 2D graphene oxide (GO) films is experimentally demonstrated. We achieve a high conversion efficiency improvement of ~7.3 dB for a 2-cm-long waveguide with monolayer GO film.

scholarly journals Enhanced Four‐Wave Mixing in Silicon Nitride Waveguides Integrated with 2D Layered Graphene Oxide Films

2020 ◽  
Vol 8 (23) ◽  
pp. 2001048 ◽  
Author(s):  
Yang Qu ◽  
Jiayang Wu ◽  
Yunyi Yang ◽  
Yuning Zhang ◽  
Yao Liang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Oxide Films ◽  
Four Wave Mixing ◽  
Wave Mixing

Anti-PT-Symmetry induced by Four Wave Mixing in Silicon Nitride Integrated Photonic Resonators

2021 ◽  
Author(s):  
Francesco De Leonardis ◽  
Martino De Carlo ◽  
Vittorio M. N. Passaro
Keyword(s):  
Silicon Nitride ◽  
Four Wave Mixing ◽  
Pt Symmetry ◽  
Wave Mixing

scholarly journals Design of silicon nitride waveguides with integrated graphene oxide films for FWM

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Silicon Nitride ◽  
Kerr Nonlinearity ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Material Parameters ◽  
Highly Nonlinear ◽  
Thermal Changes ◽  
Strong Mode ◽  
Good Agreement

We theoretically investigate and optimize four-wave mixing (FWM) in silicon nitride (SiN) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. Based on extensive previous measurements of the material parameters of the GO films, we perform detailed analysis for the influence of device parameters including waveguide geometry, GO film thickness, length, and coating position on the FWM conversion efficiency (CE) and conversion bandwidth (CB). The influence of dispersion and photo-thermal changes in the GO films is also discussed. Owing to the strong mode overlap between the SiN waveguides and the highly nonlinear GO films, FWM in the hybrid waveguides can be significantly enhanced. We obtain good agreement with previous experimental results and show that by optimizing the device parameters to balance the trade-off between Kerr nonlinearity and loss, the FWM CE can be improved by as much as ~20.7 dB and the FWM CB can be increased by ~4.4 folds, relative to the uncoated waveguides. These results highlight the significantly enhanced FWM performance that can be achieved in SiN waveguides by integrating 2D layered GO films.

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