Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer
Keyword(s):
Keyword(s):
2003 ◽
Vol 42
(Part 2, No. 3A)
◽
pp. L226-L228
◽
Keyword(s):
Keyword(s):
Keyword(s):
2014 ◽
Vol 15
(3)
◽
pp. 4657-4670
◽