scholarly journals Demonstration of 125-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate

2012 ◽  
Vol 20 (26) ◽  
pp. B256 ◽  
Author(s):  
Yutaka Urino ◽  
Yoshiji Noguchi ◽  
Masataka Noguchi ◽  
Masahiko Imai ◽  
Masashi Yamagishi ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Interconnects ◽  
Optical Modulators

scholarly journals First demonstration of high density optical interconnects integrated with lasers, optical modulators, and photodetectors on single silicon substrate

2011 ◽  
Vol 19 (26) ◽  
pp. B159 ◽  
Author(s):  
Yutaka Urino ◽  
Takanori Shimizu ◽  
Makoto Okano ◽  
Nobuaki Hatori ◽  
Masashige Ishizaka ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Interconnects ◽  
High Density ◽  
Optical Modulators

Chip-level 10-Gbit/s optical interconnects using 1 × 2 polymer vertical splitter on silicon substrate

2014 ◽  
Author(s):  
Chin-Ta Chen ◽  
Po-Kuan Shen ◽  
Teng-Zhang Zhu ◽  
Chia-Chi Chang ◽  
Shu-Shuan Lin ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Interconnects

scholarly journals Polymer-Waveguide-Based Optical Circuit With Two Vertical-Transition Output Ports Realized on Silicon Substrate for Optical Interconnects

2013 ◽  
Vol 5 (3) ◽  
pp. 7901108-7901108 ◽  
Author(s):  
Mount-Learn Wu ◽  
Chin-Ta Chen ◽  
Po-Kuan Shen ◽  
Tien-Yu Huang ◽  
Chia-Chi Chang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Interconnects ◽  
Polymer Waveguide ◽  
Vertical Transition ◽  
Optical Circuit

InP dies transferred onto silicon substrate for optical interconnects application

2006 ◽  
Vol 125 (2) ◽  
pp. 411-414 ◽  
Author(s):  
M. Kostrzewa ◽  
L. Di Cioccio ◽  
M. Zussy ◽  
J.C. Roussin ◽  
J.M. Fedeli ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Interconnects

scholarly journals Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Photonics ◽  
2019 ◽  
Vol 6 (1) ◽  
pp. 24 ◽  
Author(s):  
Papichaya Chaisakul ◽  
Vladyslav Vakarin ◽  
Jacopo Frigerio ◽  
Daniel Chrastina ◽  
Giovanni Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Silicon Germanium ◽  
Optical Interconnects ◽  
Stark Effect ◽  
Extinction Ratio ◽  
Optical Loss ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Absorption Mechanism

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

scholarly journals Slow Light with Photonic Crystals for On-Chip Optical Interconnects

2008 ◽  
Vol 2008 ◽  
pp. 1-12 ◽  
Author(s):  
Sean P. Anderson ◽  
Ashutosh R. Shroff ◽  
Philippe M. Fauchet
Keyword(s):  
Photonic Crystal ◽  
Optical Interconnects ◽  
Slow Light ◽  
Limiting Factor ◽  
Optical Modulators ◽  
New Class ◽  
Compact Size ◽  
High Bandwidth ◽  
On Chip ◽  
Electrical Connections

Transistor scaling alone can no longer be relied upon to yield the exponential speed increases we have come to expect from the microprocessor industry. The principle reason for this is the interconnect bottleneck, where the electrical connections between and within microprocessors are becoming, and in some cases have already become, the limiting factor in overall microprocessor performance. Optical interconnects have the potential to address this shortcoming directly, by providing an inter- and intrachip communication infrastructure that has both greater bandwidth and lower latency than electrical interconnects, while remaining safely within size and power constraints. In this paper, we review the requirements that a successful optical interconnect must meet, as well as some of the recent work in our group in the area of slow-light photonic crystal devices for on-chip optical interconnects. We show that slow-light interferometric optical modulators in photonic crystal can have not only high bandwidth, but also extremely compact size. We also introduce the first example of a multichannel slow light platform, upon which a new class of ultracompact optical devices can be built.

Sign in / Sign up

Export Citation Format

Share Document