scholarly journals Antireflective property of thin film a-Si solar cell structures with graded refractive index structure

2010 ◽  
Vol 19 (S2) ◽  
pp. A108 ◽  
Author(s):  
Sung Jun Jang ◽  
Young Min Song ◽  
Chan Il Yeo ◽  
Chang Young Park ◽  
Jae Su Yu ◽  
...  
2013 ◽  
Vol 22 (4) ◽  
pp. 045202 ◽  
Author(s):  
Feng-Xiang Chen ◽  
Li-Sheng Wang ◽  
Wen-Ying Xu

1997 ◽  
Vol 48 (1-4) ◽  
pp. 287-294 ◽  
Author(s):  
Akihiko Nakajima ◽  
Takayuki Suzuki ◽  
Masashi Yoshimi ◽  
Kenji Yamamoto

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Kuwano

ABSTRACTRecent advances in a-Si solar cells in Japan are reviewed. Improvements in single-junction and multi-junction solar cells are described in three main points, namely, fabrication methods, materials, and cell structures. Recently, a conversion efficiency of 11.7% was obtained for a single-junction structure. For an a-Si/poly-Si stacked structure and an a-Si/(CdS/CdTe) 4 terminal structure, conversion efficiencies of more than 13% were achieved.Then recent advances in the prevention of the light induced degradation of a-Si solar cells is mentioned. Several methods which can improve the a-Si solar cell stability are described.Finally, the present status of the industrialization of a-Si solar cells and some of the latest applications are described together with their propects.


2007 ◽  
Vol 989 ◽  
Author(s):  
Ivan Gordon ◽  
Lode Carnel ◽  
Dries Van Gestel ◽  
Guy Beaucarne ◽  
Jef Poortmans

AbstractEfficient thin-film polycrystalline-silicon (pc-Si) solar cells on inexpensive substrates could lower the price of photovoltaic electricity substantially. At the MRS conference in 2006, we presented a pc-Si solar cell with an efficiency of 5.9% that had an absorber layer made by aluminum-induced crystallization (AIC) of amorphous silicon followed by high-temperature epitaxial thickening. The efficiency of this cell was mainly limited by the current density. To obtain higher efficiencies, we therefore need to implement an effective light trapping scheme in our pc-Si solar cell process. In this work, we describe how we recently enhanced the current density and efficiency of our cells. We achieved a cell efficiency of 8.0% for pc-Si cells in substrate configuration. Our cell process is based on pc-Si layers made by AIC and thermal CVD on smoothened alumina substrates. The cells are in substrate configuration with deposited a-Si heterojunction emitters and interdigitated top contacts. The front surface of the cells is plasma textured which leads to an increase in current density. The current density is further enhanced by minimizing the back surface field thickness of the cells to reduce the light loss in this layer. Our present pc-Si solar cell efficiency together with the fast progression that we have made over the last few years indicate the large potential of pc-Si solar cells based on the AIC seed layer approach.


2011 ◽  
Author(s):  
Tino Benkenstein ◽  
Michael Flämmich ◽  
Torsten Harzendorf ◽  
Thomas Käsebier ◽  
Dirk Michaelis ◽  
...  

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