scholarly journals Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers

2010 ◽  
Vol 18 (26) ◽  
pp. 27136 ◽  
Author(s):  
C. S. Kim ◽  
Y. D. Jang ◽  
D. M. Shin ◽  
J. H. Kim ◽  
D. Lee ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Induced Absorption ◽  
Defect Densities

Effects of degradation-induced absorption in GaAs-d.h.s. laser diodes

1974 ◽  
Vol 10 (13) ◽  
pp. 252 ◽  
Author(s):  
D. Schicketanz ◽  
J. Wittmann ◽  
G. Zeidler
Keyword(s):  
Laser Diodes ◽  
Induced Absorption

Correlation Between The Lasing Characteristics and The Transient Induced Absorption In InGaN Based UV Laser Diodes

2011 ◽  
Author(s):  
C. S. Kim ◽  
D. M. Shin ◽  
Y. D. Jang ◽  
J. H. Kim ◽  
Y. H. Choi ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Uv Laser ◽  
Induced Absorption

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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