scholarly journals Planar and ridge waveguides formed in LiNbO_3 by proton exchange combined with oxygen ion implantation

2010 ◽  
Vol 18 (15) ◽  
pp. 15609 ◽  
Author(s):  
Shao-Mei Zhang ◽  
Ke-Ming Wang ◽  
Xiangzhi Liu ◽  
Zhuanfang Bi ◽  
Xiu-Hong Liu
Keyword(s):  
Ion Implantation ◽  
Proton Exchange ◽  
Oxygen Ion ◽  
Ridge Waveguides ◽  
Oxygen Ion Implantation

scholarly journals Ridge Waveguides and Y-Branch Beam Splitters in KTiOAsO4 Crystal by 15 MeV Oxygen Ion Implantation and Femtosecond Laser Ablation

2017 ◽  
Vol 35 (2) ◽  
pp. 225-229 ◽  
Author(s):  
Chen Chen ◽  
Shavkat Akhmadaliev ◽  
Carolina Romero ◽  
Javier R. Vazquez de Aldana ◽  
Shengqiang Zhou ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Ion Implantation ◽  
Femtosecond Laser Ablation ◽  
Beam Splitters ◽  
Oxygen Ion ◽  
Ridge Waveguides ◽  
Oxygen Ion Implantation

Lithium niobate planar and ridge waveguides fabricated by 3 MeV oxygen ion implantation and precise diamond dicing

2021 ◽  
Vol 19 (6) ◽  
pp. 060009
Author(s):  
Jinhua Zhao ◽  
Xueshuai Jiao ◽  
Yingying Ren ◽  
Jinjun Gu ◽  
Sumei Wang ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Ion Implantation ◽  
Oxygen Ion ◽  
Ridge Waveguides ◽  
Oxygen Ion Implantation

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Improved surface corrosion resistance of WE43 magnesium alloy by dual titanium and oxygen ion implantation

2013 ◽  
Vol 529 ◽  
pp. 407-411 ◽  
Author(s):  
Ying Zhao ◽  
Guosong Wu ◽  
Qiuyuan Lu ◽  
Jun Wu ◽  
Ruizhen Xu ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Magnesium Alloy ◽  
Ion Implantation ◽  
Surface Corrosion ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
We43 Magnesium Alloy

Microstructural and Compositional Characterization of SiC-On-Insulator Structures

1999 ◽  
Vol 5 (S2) ◽  
pp. 770-771
Author(s):  
Manabu Ishimaru ◽  
Robert M. Dickerson ◽  
Kurt E. Sickafus
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
High Speed ◽  
Scanning Transmission Electron Microscope ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Oxygen Ion Implantation

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

Nucleation & Growth of Octahedral Oxide Particles in Silicon: Oxygen Ion Implantation

1985 ◽  
Vol 59 ◽  
Author(s):  
R. W. Carpenter ◽  
G. Vanderschaeve ◽  
C. J. Varkera ◽  
S. R. Wilson
Keyword(s):  
Ion Implantation ◽  
High Density ◽  
Czochralski Silicon ◽  
Oxygen Ion ◽  
Oxide Particles ◽  
Oxygen Ion Implantation ◽  
Silicon Oxygen ◽  
Plate Type ◽  
Nucleation Growth

ABSTRACTCzochralski silicon was implanted with oxygen at 0.4 and 3.5MeV to obtain concentrations near 1020 oxygen/cm3 in the implanted region. Following implantation the wafers were aged at about 1000°C for 7 hours, and the resulting precipitates were examined by HREM. A high density of octahedral SiOx precipitates (∼1015/cm3) was the dominant morphology. Plate type precipitates and dislocations were also present at lower density. The data indicate octahedra grow from the plates.

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