scholarly journals Tuning the extraordinary transmission in a metallic/dielectric CDC hole array by changing the temperature

2010 ◽  
Vol 18 (15) ◽  
pp. 15553 ◽  
Author(s):  
Wei Wang ◽  
Yalin Lu ◽  
R. J. Knize ◽  
Kitt Reinhardt ◽  
Shaochen Chen
Keyword(s):  
Hole Array ◽  
Extraordinary Transmission

scholarly journals Measuring the near-field of extraordinary transmission through a periodic hole-array

2006 ◽  
Author(s):  
M. W. Docter ◽  
I. T. Young ◽  
O. Piciu ◽  
A. Bossche ◽  
P. F. A. Alkemade ◽  
...  
Keyword(s):  
Near Field ◽  
Hole Array ◽  
Extraordinary Transmission

scholarly journals Extraordinary transmission in metal hole array-photonic crystal hybrid structures

2012 ◽  
Vol 20 (15) ◽  
pp. 17174 ◽  
Author(s):  
O. Glushko ◽  
R. Brunner ◽  
R. Meisels ◽  
S. Kalchmair ◽  
G. Strasser
Keyword(s):  
Photonic Crystal ◽  
Hybrid Structures ◽  
Hole Array ◽  
Extraordinary Transmission

Bound states in the continuum in double-hole array perforated in a layer of photonic crystal slab

2019 ◽  
Vol 12 (12) ◽  
pp. 125002 ◽  
Author(s):  
Suxia Xie ◽  
Changzhong Xie ◽  
Song Xie ◽  
Jie Zhan ◽  
Zhijian Li ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Bound States ◽  
Hole Array ◽  
Photonic Crystal Slab ◽  
The Continuum

scholarly journals Tunable transmission at 100 THz through a metallic hole array with a varying hole channel shape

2007 ◽  
Vol 15 (22) ◽  
pp. 14629 ◽  
Author(s):  
Arvind Battula ◽  
Yalin Lu ◽  
R. J. Knize ◽  
Kitt Reinhardt ◽  
Shaochen Chen
Keyword(s):  
Hole Array ◽  
Channel Shape

scholarly journals A Thermopile Device with Sub-Wavelength Hole Arrays by CMOS-MEMS Technology

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 180
Author(s):  
Chi-Feng Chen ◽  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh
Keyword(s):  
Fdtd Method ◽  
Elliptical Hole ◽  
Oxide Semiconductor ◽  
Active Area ◽  
Hole Array ◽  
Cmos Mems ◽  
Simulation Results ◽  
Hole Arrays ◽  
Hole Structure ◽  
Sub Wavelength

A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary.

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