scholarly journals Impulsive terahertz radiation with high electric fields from an amplifier-driven large-area photoconductive antenna

2010 ◽  
Vol 18 (9) ◽  
pp. 9251 ◽  
Author(s):  
M. Beck ◽  
H. Schäfer ◽  
G. Klatt ◽  
J. Demsar ◽  
S. Winnerl ◽  
...  
Keyword(s):  
Electric Fields ◽  
Terahertz Radiation ◽  
Photoconductive Antenna ◽  
Large Area ◽  
High Electric Fields

scholarly journals Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

2008 ◽  
Vol 2008 ◽  
pp. 1-8 ◽  
Author(s):  
Victor Veliadis ◽  
Ty McNutt ◽  
Megan Snook ◽  
Harold Hearne ◽  
Paul Potyraj ◽  
...  
Keyword(s):  
Electric Fields ◽  
Low Voltage ◽  
Voltage Drop ◽  
Short Circuit ◽  
Drain Voltage ◽  
Large Area ◽  
Active Device ◽  
Circuit Performance ◽  
Power Switches ◽  
High Electric Fields

SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short-circuit performance, and operate at 300°C. 0.19 cm2 1200 V normally-on and 0.15 cm2 low-voltage normally-off VJFETs were fabricated. The 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2 V and a specific onstate resistance of 5.4 mΩ cm2. The low-voltage VJFET outputs 28 A with a forward drain voltage drop of 3.3 V and a specific onstate resistance of 15 mΩ cm2. The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches. At a forward drain voltage drop of 2.2 V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V.

Improving Amorphous Selenium Photodetector Performance Using an Organic Semiconductor

2013 ◽  
Vol 543 ◽  
pp. 451-454 ◽  
Author(s):  
Shiva Abbaszadeh ◽  
Nicholas Allec ◽  
Karim S. Karim
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Short Pulse ◽  
Amorphous Selenium ◽  
Semiconductor Materials ◽  
Manufacturing Processes ◽  
Charge Accumulation ◽  
Dark Current Density ◽  
Large Area ◽  
High Electric Fields

In this paper, a thin layer of perylene tetracarboxylic bisbenzimidazole (PTCBI) is investigated as a potential hole-blocking contact in an a-Se photodetector. The behavior of the device was characterized as a function of electric field under light and dark conditions. It was found that the PTCBI layer permits operation at high electric fields (>>10 V/μm) while maintaining a dark current density below 200 pA/mm2. Short pulse experiments were performed to assure that charge accumulation at the organic/a-Se interface is negligible and does not reduce the electric field in the a-Se layer. The detector investigated uses a simple low temperature fabrication process based on widely available semiconductor materials that can be easily integrated into current large area digital imager manufacturing processes.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Oscillations and Bistability in the Catalytic Formation of Water on Rhodium in High Electric Fields

2009 ◽  
Vol 113 (39) ◽  
pp. 17045-17058 ◽  
Author(s):  
J.-S. McEwen ◽  
P. Gaspard ◽  
T. Visart de Bocarmé ◽  
N. Kruse
Keyword(s):  
Electric Fields ◽  
High Electric Fields

Impact of high electric fields on the charge recombination process in organic light-emitting diodes

2000 ◽  
Vol 33 (19) ◽  
pp. 2379-2387 ◽  
Author(s):  
Jan Kalinowski ◽  
Massimo Cocchi ◽  
Piergiulio Di Marco ◽  
Waldemar Stampor ◽  
Gabriele Giro ◽  
...  
Keyword(s):  
Electric Fields ◽  
Light Emitting Diodes ◽  
Charge Recombination ◽  
Recombination Process ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
High Electric Fields
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