scholarly journals Plasmonic data storage medium
with metallic nano-aperture array embedded
in dielectric material

2009 ◽  
Vol 17 (22) ◽  
pp. 20203 ◽  
Author(s):  
Sinjeung Park ◽  
Jae Won Hahn
2013 ◽  
Vol 5 (17) ◽  
pp. 8407-8413 ◽  
Author(s):  
Hao Wang ◽  
Barry M. Lunt ◽  
Richard J. Gates ◽  
Matthew C. Asplund ◽  
V. Shutthanandan ◽  
...  

2005 ◽  
Vol 902 ◽  
Author(s):  
Kenkou Tanaka ◽  
Yoshiomi Hiranaga ◽  
Yasuo Cho

AbstractIn this study, a new method to achieve real information recording with a density of 1 Tbit/inch2 in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction of nano domains. Local domain switching was carried out by applying a voltage pulse. A series of test writes revealed that the bit size varied according to the polarization direction of the bits in the immediate environment. Therefore, in order to keep the bit size constant (at 25.6 nm), the pulse amplitude required to create each individual bit was calculated as a function of the polarities of the surrounding data bits. As a result, real information storage at a density of 1 Tbit/inch2 was successfully achieved, with a low bit error rate of 1.8 × 10-2.


1997 ◽  
Vol 488 ◽  
Author(s):  
W. J. Yang ◽  
Q. C. Yang ◽  
H. G. Lu ◽  
H. Y. Chen ◽  
S. M. Hou ◽  
...  

AbstractN-(3-nitrobenzylidene)-p-phenylenediamine (NBPDA) was used as ultrahigh density data storage medium by scanning tunneling microscope (STM) technique. Data marks of 1.4nm in diameter were written by applying voltage pulses between the STM tip and the substrate. Structures of single crystal and thin films were characterized by IR, UV–Vis, XRD, STM and verified by DFT quantum chemical calculation.


2020 ◽  
Vol 32 (17) ◽  
pp. 1907633 ◽  
Author(s):  
Benzheng Lyu ◽  
Yongsuk Choi ◽  
Hongyue Jing ◽  
Chuan Qian ◽  
Hyunseok Kang ◽  
...  

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