scholarly journals Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime

2008 ◽  
Vol 16 (25) ◽  
pp. 20759 ◽  
Author(s):  
N. C. Chen ◽  
C. M. Lin ◽  
C. Shen ◽  
W. C. Lien ◽  
T. Y. Lin
2015 ◽  
Vol 3 (38) ◽  
pp. 9928-9932 ◽  
Author(s):  
Xiaoyan Wu ◽  
Yuzhao Yang ◽  
Xin Chi ◽  
Tao Han ◽  
Muddasir Hanif ◽  
...  

An ultra-thin gold nanoparticle layer modified cathode is applied in PLEDs to improve device performance, originating from the balanced electron–hole recombination.


2001 ◽  
Vol 40 (Part 2, No. 3B) ◽  
pp. L282-L285 ◽  
Author(s):  
Jan Kalinowski ◽  
Massimo Cocchi ◽  
Valeria Fattori ◽  
Piergiulio Di Marco ◽  
Gabriele Giro

1994 ◽  
Vol 173-174 ◽  
pp. 191-196
Author(s):  
G. Breglio ◽  
Antonello Cutolo ◽  
P. Spirito ◽  
L. Zeni

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.


2007 ◽  
Vol 91 (14) ◽  
pp. 143504 ◽  
Author(s):  
Yun Tian ◽  
Zhengqing Gan ◽  
Zhaoqun Zhou ◽  
David W. Lynch ◽  
Joseph Shinar ◽  
...  

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