AbstractPrecision lattice parameter measurement by the X-ray diffraction method of Bond [1] has been examined as a substitutional method for IR in determining the oxygen concentration in silicon single crystals. Asymmetric 444 CuKai reflections were measured for undoped (100) oriented silicon wafers to obtain the correlation curve between the silicon lattice parameter and oxygen concentration. Precise adjustment of the optical system and computer fitting in determining the peak position allow a minute lattice dilation of silicon due to oxygen to be detected by the Bond method. The precision of this measurement system was of the order of 10-6. The lattice expansion of silicon by dissolved oxygen was determined to be at the rate of 3.2X10-24 atoms of oxygen per cm3. Furthermore, the oxygen concentrations of heavily Sb-doped silicon wafers were determined nondestructively.
Si lattice parameter measurement by centimeter X-ray interferometry