scholarly journals Excitation diffusion in GeGaSe and GeGaS glasses heavily doped with Er^3+

2008 ◽  
Vol 16 (11) ◽  
pp. 7709 ◽  
Author(s):  
Cyril Koughia ◽  
Safa O. Kasap
Keyword(s):  
Heavily Doped ◽  
Excitation Diffusion

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

OPTICAL PROPERTIES OF HEAVILY DOPED POLYACETYLENE FILMS

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-345-C3-348
Author(s):  
O. Bernard ◽  
M. Palpacuer ◽  
C. Benoit ◽  
M. Rolland ◽  
M. J.M. Abadie
Keyword(s):  
Optical Properties ◽  
Heavily Doped

Backside Emission Microscopy for Integrated Circuits on Heavily Doped Substrate

1998 ◽  
Author(s):  
Ching-Lang Chiang ◽  
Neeraj Khurana ◽  
Daniel T. Hurley ◽  
Ken Teasdale
Keyword(s):  
Integrated Circuits ◽  
Ccd Camera ◽  
Preparation Technique ◽  
Absorption Data ◽  
Ir Radiation ◽  
Heavily Doped ◽  
Emission Microscopy ◽  
Diffraction Patterns ◽  
Emission Detection ◽  
The Impact

Abstract Backside emission microscopy on heavily doped substrate materials was analyzed from the viewpoint of optical absorption by the substrate and sample preparation technique. Although it was widely believed that silicon is transparent to infrared (IR) radiation, we demonstrated by using published absorption data that silicon with doping levels above 5 x 1018cm-3 is virtually opaque, leaving only a narrow transmission window around the energy bandgap. Because the transmission depends exponentially on the thickness of die, thinning to below 100µm is shown to be required. Even an advanced IR sensor such as HgCdTe would find little light to detect without thinning the die. For imaging the circuit, an IR laser-based system produced poor images in which the diffraction patterns often ruined the contrast and obscured the image. Hence, a precise, controlled die thinning technique is required both for emission detection and backside imaging. A thinning and polishing technique was briefly described that was believed to be applicable to most ceramic packages. A software technique was employed to solve the image quality problem commonly encountered in backside imaging applications using traditional microscope light source and a scientific grade CCD camera. Finally, we showed the impact of die thickness on imaging circuits on a heavily doped n type substrate.

Damping mechanism of terahertz plasmons in graphene on heavily doped substrate

2014 ◽  
Vol 115 (10) ◽  
pp. 104501 ◽  
Author(s):  
A. Satou ◽  
Y. Koseki ◽  
V. Ryzhii ◽  
V. Vyurkov ◽  
T. Otsuji
Keyword(s):  
Heavily Doped

scholarly journals Metallic surface doping of metal halide perovskites

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuze Lin ◽  
Yuchuan Shao ◽  
Jun Dai ◽  
Tao Li ◽  
Ye Liu ◽  
...  
Keyword(s):  
Metal Ions ◽  
Metallic Surface ◽  
Grand Challenge ◽  
New Device ◽  
Surface Doping ◽  
N Doping ◽  
Halide Perovskites ◽  
Heavily Doped ◽  
Low Solubility ◽  
Striking Contrast

AbstractIntentional doping is the core of semiconductor technologies to tune electrical and optical properties of semiconductors for electronic devices, however, it has shown to be a grand challenge for halide perovskites. Here, we show that some metal ions, such as silver, strontium, cerium ions, which exist in the precursors of halide perovskites as impurities, can n-dope the surface of perovskites from being intrinsic to metallic. The low solubility of these ions in halide perovskite crystals excludes the metal impurities to perovskite surfaces, leaving the interior of perovskite crystals intrinsic. Computation shows these metal ions introduce many electronic states close to the conduction band minimum of perovskites and induce n-doping, which is in striking contrast to passivating ions such as potassium and rubidium ion. The discovery of metallic surface doping of perovskites enables new device and material designs that combine the intrinsic interior and heavily doped surface of perovskites.

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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