scholarly journals Broad-band continuous-wave parametric wavelength conversion in silicon nanowaveguides

2007 ◽  
Vol 15 (20) ◽  
pp. 12949 ◽  
Author(s):  
Mark A. Foster ◽  
Amy C. Turner ◽  
Reza Salem ◽  
Michal Lipson ◽  
Alexander L. Gaeta
Keyword(s):  
Wavelength Conversion ◽  
Continuous Wave ◽  
Broad Band

scholarly journals High efficiency photomodulators for millimeter wave and THz radiation

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
I. R. Hooper ◽  
N. E. Grant ◽  
L. E. Barr ◽  
S. M. Hornett ◽  
J. D. Murphy ◽  
...  
Keyword(s):  
High Efficiency ◽  
Continuous Wave ◽  
Broad Band ◽  
Cost Effective ◽  
Silicon Wafers ◽  
Thz Radiation ◽  
Limiting Factor ◽  
Switching Speed ◽  
Carrier Lifetimes ◽  
Narrow Frequency Band

AbstractPhotomodulators for mm-wave and THz radiation are an essential component for many imaging and signal processing applications. While a myriad of schemes have been devised to enhance photomodulation by enhancing the light-matter interaction, there has been less focus on the photoconductive materials themselves, which are often the limiting factor. Here, we present an approach to increase the photomodulation efficiency of silicon by orders of magnitude, using post treatment of off-the-shelf silicon wafers. The increase in efficiency removes the need for bulky and costly amplified laser sources, and creates the potential for compact and cost-effective modulators for real-world applications. By passivating the surfaces of long bulk-lifetime silicon wafers with Al2O3, the recombination of the photoexcited carriers at the surfaces is mostly eliminated. This results in vastly longer excess carrier lifetimes (up to ~50 ms), with corresponding increases in photoconductivity. The resulting modulators are highly efficient, with the transmission through them being reduced from ~90% to <10% over a narrow frequency band with a continuous wave excitation intensity of just 10 Wm−2, whilst modulation factors of greater than 80% can be achieved over a broad band with similar intensities. We also discuss the limitations of such long-lifetime modulators for applications where the switching speed or spatial resolution of a modulator may be critical.

scholarly journals Continuous-wave wavelength conversion in a photonic crystal fiber with two zero-dispersion wavelengths

2004 ◽  
Vol 12 (17) ◽  
pp. 4113 ◽  
Author(s):  
Thomas V. Andersen ◽  
Karen Marie Hilligs�e ◽  
Carsten K. Nielsen ◽  
Jan Th�gersen ◽  
K. P. Hansen ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystal Fiber ◽  
Wavelength Conversion ◽  
Continuous Wave ◽  
Crystal Fiber

scholarly journals Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides

2015 ◽  
Vol 40 (6) ◽  
pp. 875 ◽  
Author(s):  
Clemens J. Krückel ◽  
Víctor Torres-Company ◽  
Peter A. Andrekson ◽  
Daryl T. Spencer ◽  
Jared F. Bauters ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Wavelength Conversion ◽  
Continuous Wave ◽  
Low Loss

Applications of a New 206.5-nm Continuous-Wave Laser Source: UV Raman Determination of Protein Secondary Structure and CVD Diamond Material Properties

1996 ◽  
Vol 50 (11) ◽  
pp. 1459-1468 ◽  
Author(s):  
Janet S. W. Holtz ◽  
Richard W. Bormett ◽  
Zhenhuan Chi ◽  
Namjun Cho ◽  
X. G. Chen ◽  
...  
Keyword(s):  
Secondary Structure ◽  
Raman Spectra ◽  
Continuous Wave ◽  
Broad Band ◽  
Protein Secondary Structure ◽  
Cvd Diamond ◽  
Spectroscopic Studies ◽  
Laser Source ◽  
High Signal ◽  
Signal To Noise

We demonstrate the utility of a new 206.5-nm continuous-wave UV laser excitation source for spectroscopic studies of proteins and CVD diamond. Excitation at 206.5 nm is obtained by intracavity frequency doubling the 413-nm line of a krypton-ion laser. We use this excitation to excite resonance Raman spectra within the π → π amide transition of the protein peptide backbone. The 206.5-nm excitation resonance enhances the protein amide vibrational modes. We use these high signal-to-noise spectral data to determine protein secondary structure. We also demonstrate the utility of this source to excite CVD and gem-quality diamond within its electronic bandgap. The diamond Raman spectra have very high signal-to-noise ratios and show no interfering broad-band luminescence. Excitation within the diamond bandgap also gives rise to narrow photoluminescence peaks from diamond defects. These features have previously been observed only by cathodoluminescence measurements. This new continuous-wave UV source is superior to the previous pulsed sources, because it avoids nonlinear optical phenomena and thermal sample damage; Photoluminescence.

Wavelength conversion based on degenerate-four-wave-mixing with continuous-wave pumping in silicon nanowire waveguide

2009 ◽  
Vol 282 (8) ◽  
pp. 1659-1663 ◽  
Author(s):  
Lianxi Jia ◽  
Minming Geng ◽  
Lei Zhang ◽  
Lin Yang ◽  
Ping Chen ◽  
...  
Keyword(s):  
Wavelength Conversion ◽  
Continuous Wave ◽  
Silicon Nanowire ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Degenerate Four Wave Mixing
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